EEWORLDEEWORLDEEWORLD

Part Number

Search

BD675

Description
4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126
Categorysemiconductor    Discrete semiconductor   
File Size115KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric Compare View All

BD675 Online Shopping

Suppliers Part Number Price MOQ In stock  
BD675 - - View Buy Now

BD675 Overview

4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126

BD675 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage60 V
Processing package descriptionROHS COMPLIANT PACKAGE-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureDarlington WITH BUILT-IN diode AND resistor
Shell connectionisolation
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor750
Inchange Semiconductor
Product Specification
Silicon NPN Darligton Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD676/678/680
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD675/BD677/BD679
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
BD675
固电
IN
导½
CONDITIONS
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
HA
C
ES
NG
BD677
BD679
BD675
BD677
BD679
Open emitter
MIC
E
OR
UCT
ND
O
VALUE
45
60
80
45
60
80
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
Open collector
5
4
7
0.1
V
A
A
A
W
T
C
=25℃
40
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
3.12
UNIT
K/W
K/W

BD675 Related Products

BD675 BD677 BD679
Description 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals 3 3 3
Transistor polarity NPN NPN NPN
Maximum collector current 4 A 4 A 4 A
Maximum Collector-Emitter Voltage 60 V 60 V 80 V
Processing package description ROHS COMPLIANT PACKAGE-3 ROHS COMPLIANT PACKAGE-3 PLASTIC PACKAGE-3
state ACTIVE ACTIVE ACTIVE
packaging shape Rectangle Rectangle RECTANGULAR
Package Size Flange mounting Flange mounting FLANGE MOUNT
Terminal form THROUGH-hole THROUGH-hole THROUGH-HOLE
terminal coating MATTE Tin MATTE Tin TIN LEAD
Terminal location single single SINGLE
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY
structure Darlington WITH BUILT-IN diode AND resistor Darlington WITH BUILT-IN diode AND resistor DARLINGTON
Number of components 1 1 1
transistor applications switch switch AMPLIFIER
Transistor component materials silicon silicon SILICON
Transistor type universal power supply universal power supply GENERAL PURPOSE POWER
Minimum DC amplification factor 750 750 750
Lead-free Yes Yes -
EU RoHS regulations Yes Yes -
Shell connection isolation isolation -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1608  258  1252  315  2414  33  6  26  7  49 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号