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BDY55

Description
Silicon NPN Power Transistors
File Size112KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BDY55 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4982
DESCRIPTION
・With
ITO-220 package
・Switching
power transistor
・Low
collector saturation voltage
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (ITO-220) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
固电
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
导½
CONDITIONS
Open emitter
Open base
Collector current-Peak
Base current
Base current-peak
HAN
INC
SEM
GE
Open collector
ON
IC
OR
DUT
VALUE
100
80
7
10
20
1.5
2
UNIT
V
V
V
A
A
A
A
W
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
25
150
-55~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction case
MAX
5.0
UNIT
℃/W

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