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BU2520D

Description
Silicon NPN Power Transistors
File Size118KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BU2520D Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2520D
DESCRIPTION
・With
TO-3PN package
・High
voltage,high speed
・Built-in
damper diode
APPLICATIONS
・For
use in horizontal deflection circuits of
large screen colour TV receivers.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
固电
导½
Collector-base voltage
HA
INC
Emitter-base voltage
Base current(DC)
Base current-peak
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
1500
800
7.5
10
25
6
9
UNIT
V
V
V
A
A
A
A
W
Open collector
Collector current (DC)
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
125
150
-65~150

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Description Silicon NPN Power Transistors Silicon NPN Power Transistors
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