Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU546
DESCRIPTION
・With
TO-3 package
・High
voltage
・Fast
switching speed
APPLICATIONS
・For
color TV horizontal deflection circuits.
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
固电
IN
Collector-base voltage
导½
半
PARAMETER
CONDITIONS
Open emitter
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
ANG
CH
MIC
E SE
Open base
Open collector
T
C
=25℃
OR
UCT
ND
O
VALUE
1300
550
7
6
100
175
-65~175
UNIT
V
V
V
A
W
℃
℃
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
BU546
MAX
UNIT
V
CEO(SUS)
Collector-emitter sustaining voltage
I
C
=100mA; I
B
=0;
550
V
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=10mA; I
C
=0;
7
V
V
CEsat
Collector-emitter saturation voltage
I
C
=3.2A;I
B
=0.8A
2.0
V
V
BEsat
Base-emitter saturation voltage
I
C
=3.2A;I
B
=0.8A
1.3
V
I
CBO
Collector cut-off current
V
CB
=1300V;I
E
=0
1.0
mA
I
EBO
Emitter cut-off current
V
EB
=5V;I
C
=0
0.1
mA
h
FE
DC current gain
固电
IN
导½
半
I
C
=1.5A ; V
CE
=5V
8
ANG
CH
MIC
E SE
OR
UCT
ND
O
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU546
固电
IN
导½
半
MIC
E SE
ANG
CH
OR
UCT
ND
O
Fig.2 Outline dimensions
3
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