Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BU941P
DESCRIPTION
・With
TO-3PN package
・DARLINGTON
・High
breakdown voltage
APPLICATIONS
・High
ruggedness electronic ignitions.
・High
voltage ignition coil driver
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
固电
导½
半
PARAMETER
CONDITIONS
Collector-base voltage
Collector-emitter voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Base current-peak
ES
NG
MIC
E
Open emitter
Open base
Open collector
OR
UCT
ND
O
VALUE
500
400
5
15
30
1
5
UNIT
V
V
V
A
A
A
A
W
℃
℃
Collector current -peak
Total power dissipation
Max.operating junction temperature
Storage temperature
T
C
=25℃
155
175
-65~175
THERMAL CHARACTERISTICS
SYMBOL
R
th j-case
PARAMETER
Thermal resistance junction case
MAX
0.97
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACT ERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
V
BEsat-3
I
CES
I
CEO
I
EBO
h
FE
V
F
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
I
C
=0.1 A ;I
B
=0;L=10mH
I
C
=8A; I
B
=0.1 A
I
C
=10A; I
B
=0.25 A
I
C
=12A; I
B
=0.3 A
I
C
=8A; I
B
=0.1 A
I
C
=10A; I
B
=0.25 A
I
C
=12A; I
B
=0.3 A
V
CE
=500V
;
V
BE
=0;
T
j
=125℃
V
CE
=450V
;
I
B
=0;
T
j
=125℃
V
EB
=5V; I
C
=0
MIN
400
TYP.
BU941P
MAX
UNIT
V
1.6
1.8
2.0
2.2
2.5
2.7
V
V
V
V
V
V
mA
mA
mA
电半
固
导½
Collector cut-off current
Emitter cut-off current
DC current gain
Diode forward voltage
HA
INC
ES
NG
I
C
=5A ; V
CE
=10V
MIC
E
OR
UCT
ND
O
0.1
0.5
20
300
2.5
0.1
0.5
I
F
=10A
V
2
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