Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUL381
DESCRIPTION
・With
TO-220C package
・High
voltage capability
・Very
high switching speed
APPLICATIONS
・Designed
for use in lighting
applications and low cost
switch-mode power supplies.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
PARAMETER
固电
导½
半
Collector-base voltage
HA
INC
Emitter-base voltage
Collector current
Base current
Collector-emitter voltage
ES
NG
Open emitter
Open base
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
800
400
9
5
8
2
4
UNIT
V
V
V
A
A
A
A
W
℃
℃
Open collector
Collector current-Peak (t
p
<5 ms)
Base current-Peak (t
p
<5 ms)
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
70
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance from junction to case
VALUE
1.78
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
(BR)EBO
V
CEsat-1
V
CEsat-2
V
CEsat-3
V
BEsat-1
V
BEsat-2
I
CES
I
CEO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
I
C
=100mA; L=25mH
I
E
=10mA; I
C
=0
I
C
=1A ;I
B
=0.2A
I
C
=2A ;I
B
=0.4A
I
C
=3A ;I
B
=0.8A
I
C
=1A ;I
B
=0.2A
I
C
=2A ;I
B
=0.4A
V
CE
=800V V
BE
=0
T
j
=125℃
V
CE
=400V; I
B
=0
I
C
=2A ; V
CE
=5V
MIN
400
TYP.
BUL381
MAX
UNIT
V
0.5
0.7
1.1
1.1
1.2
100
500
V
V
V
V
V
μA
μA
电半
固
Turn-on time
Storage time
Fall time
Collector cut-off current
DC current gain
DC current gain
导½
Switching times resistive load
t
on
t
s
t
f
HA
INC
ES
NG
I
C
=10mA ; V
CE
=5V
MIC
E
OR
UCT
ND
O
250
8
10
1
1.4
2.2
0.8
μs
μs
μs
V
CC
=250V ,I
C
=2A
I
B1
=- I
B2
=0.4A
t
p
=30μs
2