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BUX81

Description
POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size114KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric Compare View All

BUX81 Overview

POWER TRANSISTOR

BUX81 Parametric

Parameter NameAttribute value
stateActive
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
voltage ;fast switching speed
・Low
saturation voltage
APPLICATIONS
・Switching-mode
power supplies ,CRT
scanning,inverters,and other industrial
applications
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
BUX81
Fig.1 simplified outline (TO-3) and symbol
Collector
ABSOLUTE MAXIMUM RATINGS(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
电半
PARAMETER
Collector-base voltage
导½
CONDITIONS
ANG
CH
IN
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
MIC
E SE
Open emitter
Open base
Open collector
OR
CT
NDU
O
VALUE
1000
450
10
10
15
4
6
UNIT
V
V
V
A
A
A
A
W
T
C
=25℃
150
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
1.17
UNIT
℃/W

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