Polar
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTU4N60P
IXTY4N60P
IXTA4N60P
IXTP4N60P
V
DSS
I
D25
R
DS(on)
= 600V
= 4A
2
G
D
S
D (Tab)
TO-251 (IXTU)
TO-252 (IXTY)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25C to 150C
T
J
= 25C to 150C, R
GS
= 1M
Continuous
Transient
T
C
= 25C
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25C
Maximum Ratings
600
600
30
40
4
10
4
150
10
90
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
N/lb
Nm/lb.in
g
g
g
g
GD
S
S
D (Tab)
TO-263 (IXTA)
G
S
D (Tab)
TO-220 (IXTP)
D (Tab)
G = Gate
S = Source
Features
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Force (TO-263 & TO-251)
Mounting Torque (TO-220)
TO-251
TO-252
TO-263
TO-220
300
260
10..65 / 2.2..14.6
1.13 / 10
0.40
0.35
2.50
3.00
International Standard Packages
Low Q
G
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 100μA
V
GS
=
30V,
V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125C
Characteristic Values
Min.
Typ.
Max.
600
3.0
5.5
V
V
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Discharge Circiuts in Lasers, Spark
Igniters, RF Generators
High Voltage Pulse Power
Applications
100
nA
1
A
50
A
2
V
GS
= 10V, I
D
= 0.5
•
I
D25
, Note 1
© 2017 IXYS CORPORATION, All Rights Reserved
DS99423F(6/17)
IXTU4N60P
IXTA4N60P
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
Q
g(on)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
R
thJC
R
thCS
TO-220
0.50
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 30 (External)
V
GS
= 10V, V
DS
= 0.5
•
V
DSS
, I
D
= 0.5
•
I
D25
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max
2.8
4.6
635
65
5.7
13
6
4
25
10
50
20
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
1.4
C/W
C/W
IXTY4N60P
IXTP4N60P
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 4A, -di/dt = 100A/μs, V
R
= 100V
500
Characteristic Values
Min.
Typ.
Max
4
12
1.5
A
A
V
ns
Note 1. Pulse test, t
300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
7,005,734B2
6,759,692
7,063,975B2
6,771,478B2 7,071,537
7,157,338B2
IXTU4N60P
IXTA4N60P
Fig. 1. Output Characteristics @ T
J
= 25 C
4.0
3.5
3.0
V
GS
= 10V
8V
7V
8
7
6
V
GS
= 10V
8V
o
IXTY4N60P
IXTP4N60P
o
Fig. 2. Extended Output Characteristics @ T
J
= 25 C
I
D
- Amperes
I
D
- Amperes
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
9
10
6V
5
7V
4
3
2
1
0
0
5
10
15
20
25
30
6V
V
DS
- Volts
o
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125 C
4.0
V
GS
= 10V
3.5
3.0
7V
2.8
2.4
2.0
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 2A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
= 4A
I
D
- Amperes
2.5
2.0
1.5
1.0
0.5
5V
0.0
0
2
4
6
8
10
12
14
16
18
20
6V
I
D
= 2A
1.6
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
3.0
Fig. 5. R
DS(on)
Normalized to I
D
= 2A Value vs.
Drain Current
V
GS
= 10V
Fig. 6. Maximum Drain Current vs. Case Temperature
4.5
4.0
3.5
3.0
2.5
T
J
= 125 C
o
R
DS(on)
- Normalized
2.0
T
J
= 25 C
1.5
o
I
D
- Amperes
2.5
2.0
1.5
1.0
1.0
0.5
0.5
0
1
2
3
4
5
6
7
8
0.0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved
IXTU4N60P
IXTA4N60P
Fig. 7. Input Admittance
6
V
DS
= 10V
5
8
10
V
DS
= 10V
IXTY4N60P
IXTP4N60P
Fig. 8. Transconductance
T
J
= - 40 C
o
g
f s
- Siemens
4
I
D
- Amperes
25 C
6
125 C
4
o
o
3
T
J
= 125 C
2
25 C
- 40 C
1
o
o
o
2
0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
0
0
1
2
3
4
5
6
7
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
12
10
9
10
8
7
V
DS
= 300V
I
D
= 2A
I
G
= 10mA
Fig. 10. Gate Charge
8
I
S
- Amperes
V
GS
- Volts
T
J
= 25 C
o
6
5
4
3
2
1
6
o
4
T
J
= 125 C
2
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
10
0
0
Fig. 13. Maximum Transient Thermal Impedance
2
4
6
8
10
12
14
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
1,000
Ciss
2
Fig. 12. Maximum Transient Thermal Impedance
1
Capacitance - PicoFarads
100
Coss
Z
(th)JC
- K / W
0.1
10
f
= 1 MHz
1
0
5
10
15
20
25
30
Crss
35
40
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
- Volts
Pulse Width - Second
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_4N60P(23) 6-20-17-A
IXTU4N60P
IXTA4N60P
TO-252 AA Outline
A
E
b3
4
A
L3
c2
IXTY4N60P
IXTP4N60P
A
A1
TO-263 Outline
E
C2
L1
A1
D
H
1
2
3
L2
A
TO-220 Outline
E1
E
oP
D1
A1
H
4
Q
D
H1
D2
L4
1
2
3
L1
A2
L
L2
c
e
e1
e1
OPTIONAL
b2
0
5.55MIN
1 - Gate
2,4 - Drain
3 - Source
b2
b
L3
c
0
e
0.43 [11.0]
e
D1
E1
0.34 [8.7]
EJECTOR
PIN
A2
L1
L
6.50MIN
4
6.40
2.85MIN
BOTTOM
VIEW
2.28
1.25MIN
LAND PATTERN RECOMMENDATION
A2
0.66 [16.6]
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.12 [3.0]
0.10 [2.5]
0.06 [1.6]
e
e1
c
3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
TO-251 OUTLINE
© 2017 IXYS CORPORATION, All Rights Reserved
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