INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2506DX
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 700V (Min)
·High
Switching Speed
·Built-in
Damper Diode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
color TV receivers.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
700
7.5
5
8
3
5
45
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2506DX
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA ; I
B
= 0,L= 25mH
700
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 600mA; I
C
= 0
7.5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.79A
B
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 3A; I
B
= 0.79A
B
1.1
1.0
2.0
136
V
I
CES
Collector Cutoff Current
V
CE
= 1500V ; V
BE
= 0
V
CE
= 1500V ; V
BE
= 0; T
C
=125℃
V
EB
= 7.5V ; I
C
= 0
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= 0.3A ; V
CE
= 5V
12
h
FE-2
DC Current Gain
I
C
= 3A; V
CE
= 5V
3.8
7.5
V
ECF
C-E Diode Forward Voltage
I
F
= 3A
2.0
V
C
OB
Output Capacitance
I
E
= 0; V
CB
= 10V; f
test
= 1MHz
47
pF
Switching times
μs
μs
t
stg
t
f
Storage Time
Fall Time
I
C
= 3A, I
B(
end
)
= 0.67A; C
FB
= 9.4nF
L
C
= 1.35mH; L
B
= 8μH; -V
BB
= 4V;
(-dI
B
/dt= 0.45A/μs)
6.0
0.5
isc Website：www.iscsemi.cn
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