INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BU2515DX
DESCRIPTION
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 800V (Min)
·High
Switching Speed
·Built-in
Damper Diode
APPLICATIONS
·Designed
for use in horizontal deflection circuits of
PC monitors.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector- Emitter Voltage(V
BE
= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current- Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1500
800
7.5
9
20
5
7.5
45
150
-55~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal Resistance,Junction to Case
MAX
2.8
UNIT
℃/W
R
th j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
BU2515DX
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-Emitter Sustaining Voltage
I
C
= 100mA; I
B
= 0,L= 25mH
800
V
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
E
= 600mA; I
C
= 0
7.5
V
V
CE
(sat)
Collector-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 0.9A
5.0
V
V
BE
(sat)
Base-Emitter Saturation Voltage
I
C
= 4.5A; I
B
= 0.9A
V
CE
= BV
CES
; V
BE
= 0
V
CE
= BV
CES
; V
BE
= 0; T
C
=125℃
V
EB
= 6V ; I
C
= 0
130
1.0
1.0
2.0
V
I
CES
Collector Cutoff Current
mA
I
EBO
Emitter Cutoff Current
mA
h
FE-1
DC Current Gain
I
C
= 1A; V
CE
= 5V
13
h
FE-2
DC Current Gain
I
C
= 4.5A; V
CE
= 5V
5
10.2
V
ECF
C-E Diode Forward Voltage
I
F
= 4.5A
2.2
V
isc Website：www.iscsemi.cn
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