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BUT11A

Description
5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size136KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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BUT11A Overview

5 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220AB

BUT11A Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current5 A
Maximum Collector-Emitter Voltage450 V
Processing package descriptionPlastic, TO-220, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingtin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structuresingle
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeuniversal power supply
Minimum DC amplification factor10
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUT11A
DESCRIPTION
·High
Voltage
·High
Speed Switching
APPLICATIONS
·Converters
·Inverters
·Switching
regulators
·Motor
control systems
ABSOLUTE MAXIMUM RATINGS (T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
7
5
10
2
100
150
-65~150
UNIT
V
V
V
A
A
A
W
P
C
T
j
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
1.25
UNIT
℃/W
isc Website:www.iscsemi.cn
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