INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
KSC5338
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR) CEO
= 450V(Min)
·High
Switching Speed
·Wide
Area of Safe Operation
APPLICATIONS
·Designed
for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1000
450
9
5
10
2
4
100
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
J
T
stg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CE
(sat)-1
V
CE
(sat)-2
V
BE
(sat)-1
V
BE
(sat)-2
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Output Capacitance
Current-Gain—Bandwidth Product
CONDITIONS
I
C
= 1mA; I
E
= 0
I
C
= 5mA; I
B
= 0
B
KSC5338
MIN
1000
450
9
TYP.
MAX
UNIT
V
V
V
I
E
= 1mA; I
C
= 0
I
C
= 1A; I
B
= 0.1A
B
0.8
0.5
1.1
1.25
10
10
15
6
70
14
30
V
V
V
V
μA
μA
I
C
= 2A; I
B
= 0.4A
B
I
C
= 1A; I
B
= 0.1A
B
I
C
= 2A; I
B
= 0.4A
B
V
CB
= 800V; V
BE
= 0
V
EB
= 9V; I
C
=0
I
C
= 0.5A; V
CE
= 5V
I
C
= 2A; V
CE
= 1V
I
E
= 0; V
CB
= 10V; f
test
= 0.1MHz
I
C
= 0.1A ;V
CE
= 6V
pF
MHz
Switching Times
t
on
t
s
t
f
Turn-On Time
Storage Time
Fall Time
I
C
= 1A; I
B1
= -I
B2
=0.2A;
V
CC
= 125V
0.2
2.0
0.5
μs
μs
μs
isc Website：www.iscsemi.cn
2
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