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2N5344

Description
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 1A I(C) | TO-66
File Size52KB,2 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
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TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 1A I(C) | TO-66

INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
2N5344
DESCRIPTION
·High
Collector-Emitter Sustaining Voltage-
: V
CEO(SUS)
= -250V(Min)
·High
Switching Speed
·High
Current-Gain Bandwidth Product-
: f
T
= 60MHz(Min)@ I
C
= -0.1A
APPLICATIONS
·Designed
for high voltage switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
J
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Total Power Dissipation@T
C
=25℃
Junction Temperature
Storage Temperature
VALUE
-250
-250
-5
-1.0
-0.5
40
200
-65~200
UNIT
V
V
V
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance,Junction to Case
MAX
4.38
UNIT
℃/W
isc Website:www.iscsemi.cn
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