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BUW12A

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size121KB,3 Pages
ManufacturerInchange Semiconductor
Download Datasheet Parametric Compare View All

BUW12A Overview

Transistor

BUW12A Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・High
voltage,fast speed
・Low
collector saturation voltage
APPLICATIONS
・Specially
intended for operating
In industrial applications
PINNING (See Fig.2)
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BUW12 BUW12A
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
固电
IN
导½
PARAMETER
CONDITIONS
Open emitter
BUW12
Collector-base voltage
BUW12A
BUW12
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
ANG
CH
BUW12A
MIC
E SE
Open base
Open collector
OR
UCT
ND
O
VALUE
850
1000
400
450
9
8
20
4
UNIT
V
V
V
A
A
A
W
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25℃
125
150
-65~175
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.2
UNIT
℃/W

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BUW12A BUW12
Description Transistor Transistor
Reach Compliance Code unknown unknown
Base Number Matches 1 1
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