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BC546BDWP

Description
Small Signal Bipolar Transistor, 65V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2
CategoryDiscrete semiconductor    The transistor   
File Size45KB,1 Pages
ManufacturerDiodes Incorporated
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BC546BDWP Overview

Small Signal Bipolar Transistor, 65V V(BR)CEO, 1-Element, NPN, Silicon, 0.015 X 0.015 INCH, G1, DIE-2

BC546BDWP Parametric

Parameter NameAttribute value
Parts packaging codeDIE
package instructionUNCASED CHIP, S-XUUC-N2
Contacts2
Reach Compliance Codeunknown
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeS-XUUC-N2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeSQUARE
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)235
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperature10
Transistor component materialsSILICON
Nominal transition frequency (fT)225 MHz
Base Number Matches1
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