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DF10STR16

Description
Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, SURFACE MOUNT, DIP-4
CategoryDiscrete semiconductor    diode   
File Size62KB,4 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

DF10STR16 Overview

Bridge Rectifier Diode, 1 Phase, 1A, 1000V V(RRM), Silicon, SURFACE MOUNT, DIP-4

DF10STR16 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeDIP
package instructionR-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLEAKAGE CURRENT IS NOT AT 25 DEG C
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Maximum non-repetitive peak forward current31 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1000 V
Maximum reverse current0.000005 µA
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
Bulletin U2788 rev. G 04/03
DF SERIES
1A Single Phase D.I.L. Rectifier Bridge
Features
• Glass passivated chips
• Leads on standard 0.1" grid
• Suitable for automatic insertion
• High surge current capability
• Fully characterised data
• Wide temperature range
• Surface mount option
• Lead free terminals solderable as per
MIL-STD-750 Method 2026
• High temperature soldering guaranteed 260°C/8-10 secs
• Polarity symbols marked on the case
• UL E160375 approved
Description
The DF Series of Single Phase Rectifier Bridges
consists of four silicon junctions encapsulated in a 4
pin D.I.L. package. These devices are intended for
general use in industrial and consumer equipment.
+
~
~
I
O(av)
I
O(av)
= 1.0 A
V
RRM
range
50 to 1000V
-
Electrical Specification
DF...
I
O
I
FSM
Maximum DC output
current
Maximum peak one
cycle, non-repetitive
surge current
I
2
t
Maximum I
2
t capability
for fusing
4.5
4.1
6.4
5.8
I
√t
2
2
Units Conditions
A
A
A
A
A
2
s
A
2
s
A
2
s
A
2
s
A
√s
2
1.0
0.8
30
31
T
amb
= 40
o
C, Resistive or inductive load
T
amb
= 40
o
C, Capacitive load
t = 10ms, 20ms
t = 8.3ms, 16.7ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Following any rated
load condition and with
rated V
RRM
reapplied
Initial T
J
= T
J
max
100% V
RRM
reapplied
Initial T
J
= T
J
max
no voltage reapplied
Maximum I
√t
capability for fusing
Maximum peak forward
voltage per diode
Typical peak reverse
leakage per diode
Operating frequency
range
Maximum repetitive peak
reverse voltage range
64
1.0
5
100
50 to 1000
50 to 1000
t = 0.1 to 10ms, no voltage reapplied
I
FM
= 1.0A, T
J
= 25
o
C
T
J
= 25
o
C, 100% V
RRM
T
J
= 150
o
C, 100% V
RRM
V
FM
I
RM
f
V
RRM
V
µA
µA
Hz
V
Thermal and Mechanical Specifications
DF...
T
J
T
stg
R
thJA
W
Operating and storage
temperature range
Thermal resistance,
junctions to ambient
Approximate weight
0.6 (0.02)
g (oz)
60
K/W
- 55 to 150
Units
o
Conditions
C
www.irf.com
1

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Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
package instruction R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Contacts 4 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features LEAKAGE CURRENT IS NOT AT 25 DEG C LEAKAGE CURRENT IS NOT AT 25 DEG C UL RECOGNIZED UL RECOGNIZED LEAKAGE CURRENT IS NOT AT 25 DEG C
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V 1 V 1 V
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
JESD-609 code e0 e0 e0 e0 e0
Maximum non-repetitive peak forward current 31 A 31 A 31 A 31 A 31 A
Number of components 4 4 4 4 4
Phase 1 1 1 1 1
Number of terminals 4 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 1000 V 400 V 200 V 600 V 600 V
Maximum reverse current 0.000005 µA 0.000005 µA 0.000005 µA 0.000005 µA 0.000005 µA
surface mount YES YES YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Base Number Matches 1 1 1 1 1
Parts packaging code DIP DIP - - DIP
Maker - International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon )

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