AOI472A
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOI472A is fabricated with SDMOS
TM
trench
technology that combines excellent R
DS(ON)
with low gate
charge.The result is outstanding efficiency with
controlled switching behavior. This universal technology
is well suited for PWM, load switching and general
purpose applications.
Features
V
DS
(V) =25V
I
D
= 50A
R
DS(ON)
< 5.2mΩ
R
DS(ON)
< 9.5mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
100% UIS Tested!
100% Rg Tested!
- RoHS Compliant
- Halogen Free
TO-251A
IPAK
Top View
Bottom View
D
D
S
G
D
S
D
G
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Repetitive avalanche energy L=50uH
T
C
=25°C
Power Dissipation
Power Dissipation
B
C
Maximum
25
±20
50
39
100
17
13
50
63
50
25
2.5
1.6
-55 to 175
Units
V
V
A
T
C
=25°C
T
C
=100°C
C
I
D
I
DM
I
DSM
I
AR
E
AR
P
D
P
DSM
T
J
, T
STG
T
A
=25°C
T
A
=70°C
A
A
mJ
W
W
°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
15
41
2.1
Max
20
50
3
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=25V, V
GS
=0V
T
J
=55°C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=30A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=20A
Forward Transconductance
V
DS
=5V, I
D
=30A
Diode Forward Voltage
I
S
=1A,V
GS
=0V
Maximum Body-Diode Continuous Current
1500
V
GS
=0V, V
DS
=12.5V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
340
200
1.1
25
V
GS
=10V, V
DS
=12.5V, I
D
=30A
12
3.5
6.5
V
GS
=10V, V
DS
=12.5V,
R
L
=0.42Ω, R
GEN
=3Ω
I
F
=30A, dI/dt=500A/µs
9.5
17
T
J
=125°C
1.2
100
4.3
6.2
8
65
0.7
1
50
1800
445
285
1.6
31
15
4.8
8.9
8
10.4
29
9
12
21
15
26
2200
580
400
2.4
40
20
7
13
5.2
7.4
9.5
2
Min
25
10
50
100
2.5
Typ
Max
Units
V
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=30A, dI/dt=500A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T =25°C. The Power
A
dissipation P
DSM
is based on R
θJA
and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P
D
is based on T
J(MAX)
=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=175°C. Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R and case to ambient.
θJC
E. The static characteristics in Figures 1 to 6 are obtained using <300 pulses, duty cycle 0.5% max.
µs
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is limited by bond-wires.
Repetitive avalanche energy L=50uH
C
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25°C.
A
Rev0 : Dec-08
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
10V
80
7V
60
I
D
(A)
I
D
(A)
4V
40
20
20
V
GS
=3.5V
0
0
1
2
3
4
5
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
125°C
25°C
40
5V
4.5V
60
80
V
DS
=5V
0
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
V
GS
=4.5V
R
DS(ON)
(m
Ω
)
8
6
4
V
GS
=10V
2
0
0
15
20
25
30
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
25
50
75
100
125
150
175
200
Temperature (°C)
0
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
V
GS
=10V
I
D
=30A
I
D
=20A
17
5
2
V
GS
=4.5V
10
20
I
D
=30A
15
R
DS(ON)
(m
Ω
)
I
S
(A)
1.0E+02
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
25°C
1.0E-04
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
125°C
25°C
40
10
125°C
5
0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=12.5V
I
D
=30A
Capacitance (pF)
2800
2400
2000
1600
1200
800
400
C
rss
0
0
5
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
35
0
0
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
25
C
oss
C
iss
8
V
GS
(Volts)
6
4
2
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
10µs
Power (W)
200
160
R
DS(ON)
limited
DC
10µs
100µs
1ms
10ms
120
80
40
0
0.0001
T
J(Max)
=175°C
T
C
=25°C
T
J(Max)
=175°C
T
C
=25°C
17
5
2
10
0.1
1
V
DS
(Volts)
10
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θJC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3°C/W
1
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
0.001
0.01
0.1
1
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOI472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
I
AR
(A) Peak Avalanche Current
T
A
=25°C
Power Dissipation (W)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
60
T
A
=100°C
T
A
=125°C
40
T
A
=150°C
20
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, t
A
(s)
Figure 12: Single Pulse Avalanche capability (Note
C)
60
50
Current rating I
D
(A)
10000
T
A
=25°C
1000
Power (W)
40
30
20
10
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
100
10
17
5
2
10
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
0
18
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=50°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
0.01
P
D
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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