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T-IXGD32N60B

Description
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size163KB,1 Pages
ManufacturerIXYS
Download Datasheet Parametric View All

T-IXGD32N60B Overview

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

T-IXGD32N60B Parametric

Parameter NameAttribute value
package instructionUNCASED CHIP, R-XUUC-N2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
JESD-30 codeR-XUUC-N2
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formUNCASED CHIP
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationUPPER
Transistor component materialsSILICON
Base Number Matches1

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