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SZM-2166Z-EVB1

Description
2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size682KB,16 Pages
ManufacturerSIRENZA
Websitehttp://www.sirenza.com/
Download Datasheet Parametric Compare View All

SZM-2166Z-EVB1 Overview

2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER

SZM-2166Z-EVB1 Parametric

Parameter NameAttribute value
Maximum input power26 dBm
Minimum operating frequency2300 MHz
Maximum operating frequency2700 MHz
Minimum operating temperature-40 Cel
Maximum operating temperature85 Cel
Processing package descriptionGREEN, PLASTIC, QFN-40
stateActive
Microwave RF TypeNARROW BAND HIGH POWER
structureCOMPONENT
Gain34.5 dB
Maximum voltage standing wave ratio10
Preliminary
Product Description
Sirenza Microdevices’ SZM-2166Z is a high linearity class AB
Heterojunction Bipolar Transistor (HBT) amplifier housed in a
low-cost surface-mountable plastic Q-FlexN multi-chip module
package. This HBT amplifier is made with InGaP on GaAs
device technology and fabricated with MOCVD for an ideal
combination of low cost and high reliability.
This product is specifically designed for 802.16 customer
premise equipment (CPE) terminals in the 2.3-2.7 GHz bands.
It can run from a 3V to 6V supply. The external output match
and bias adjustability allows load line optimization for other
applications or over narrower bands. It features an output
power detector, on/off power control and high RF overdrive
robustness. A 20dB step attenuator feature can be utilized by
switching the second stage Power up/down control. This prod-
uct features a RoHS compliant and Green package with matte
tin finish, designated by the ‘Z’ suffix.
SZM-2166Z
2.3-2.7GHz 2W Power Amplifier
Pb
RoHS Compliant
&
Green
Package
6mm x 6mm QFN Package
Functional Block Diagram
Vcc = 5V
RFIN
RFOUT
Product Features
P1dB = 35dBm @ 6V
Three Stages of Gain: 37dB
802.11g 54Mb/s Class AB Performance
Pout = 27dBm @ 2.5% EVM, Vcc 6V, 878mA
Active Bias with Adjustable Current
On-chip Output Power Detector
Low Thermal Resistance
Power up/down control < 1μs
Attenuator step 20dB @ Vpc2 = 0V
Vbias = 5V
Stage 1
Bias
Stage 2
Bias
Stage 3
Bias
Applications
P
ower
Up/Dow n
Control
P
ower
Detector
802.16 WiMAX Driver or Output Stage
802.11b/g WLAN, WiFi
CPE Terminal Applications
Unit
MHz
dBm
dB
%
dBc
dB
dB
V
mA
mA
µA
ºC/W
12
615
10
13
34.5
Min.
2300
35
36
2.5
-40
8.3
14
17
0.9 to 1.8
724
4
100
832
-35
Typ.
Max.
2700
Key Specifications
Symbol
f
O
P
1dB
S
21
EVM%
IM3
NF
IRL
ORL
Vdet Range
I
cq
I
VPC
I
leak
R
th, j-l
Parameters: Test Conditions, 2.5-2.7GHz App circuit,
Z
0
= 50Ω, V
CC
= 6.0V, Iq = 724mA, T
BP
= 30ºC
Frequency of Operation
Output Power at 1dB Compression – 2.7GHz
Small Signal Gain – 2.7GHz
EVM at 27dBmOutput power EVM 802.11g 54Mb/s - 2.7GHz
Third Order Suppression (Pout=23dBm per tone) - 2.7GHz
Noise Figure at 2.7 GHz
Worst Case Input Return Loss 2.5-2.7GHz
Worst Case Output Return Loss 2.5-2.7GHz
Output Voltage Range for Pout=10dBm to 33dBm
Quiescent Current (V
cc
= 6V)
Power Up Control Current (V
pc
=6V, ( I
VPC1
+I
VPC2
+ I
VPC3
)
Vcc Leakage Current (V
cc
= 6V, V
pc
= 0V)
Thermal Resistance (junction - lead)
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions.
Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without
notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product
for use in life-support devices and/or systems.
Copyright 2007 Sirenza Microdevices, Inc. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-105683 Rev B

SZM-2166Z-EVB1 Related Products

SZM-2166Z-EVB1 SZM-2166Z SZM-2166Z-EVB3 SZM-2166Z-EVB2
Description 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 2300 MHz - 2700 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
Maximum input power 26 dBm 26 dBm 26 dBm 26 dBm
Minimum operating frequency 2300 MHz 2300 MHz 2300 MHz 2300 MHz
Maximum operating frequency 2700 MHz 2700 MHz 2700 MHz 2700 MHz
Minimum operating temperature -40 Cel -40 Cel -40 Cel -40 Cel
Maximum operating temperature 85 Cel 85 Cel 85 Cel 85 Cel
Processing package description GREEN, PLASTIC, QFN-40 GREEN, PLASTIC, QFN-40 GREEN, PLASTIC, QFN-40 GREEN, PLASTIC, QFN-40
state Active Active Active Active
Microwave RF Type NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER NARROW BAND HIGH POWER
structure COMPONENT COMPONENT COMPONENT COMPONENT
Gain 34.5 dB 34.5 dB 34.5 dB 34.5 dB
Maximum voltage standing wave ratio 10 10 10 10
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