FBI2A4S1-4 datasheet, PDF - EEWORLD Datasheet

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FBI2A4S1-4: DescriptionBridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4; CategoryDiscrete semiconductor diode; File Size32KB，2 Pages; ManufacturerFagor Electrónica; Environmental Compliance

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FBI2A4S1-4 Overview

Bridge Rectifier Diode, 1 Phase, 2A, 50V V(RRM), Silicon, PLASTIC PACKAGE-4

FBI2A4S1-4 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	R-PSFM-T4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
JESD-609 code	e3
Maximum non-repetitive peak forward current	60 A
Number of components	1
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	2 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Terminal surface	TIN
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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FBI2A4S1.......FBI2M4S1

2 Amp. Glass Passivated Bridge Rectifier

Dimensions in mm.

3.5

Plastic

Case

Voltage

50 to 1000 V.

Current

2 A.

0.8

+ 0.05

• Glass Passivated Junction Chips.

suffix

–4

0.5

•

UL recognized under component index file

number E130180.

•

Lead and polarity identifications.

•

Case: Molded Plastic.

•

Ideal for printed circuit board (P

.C.B.).

•

The plastic material carries U/L recognition 94 V-O.

13.5

• Mounting Instructions

•

High temperature soldering guaranteed: 260 ºC – 10 sc.

•

Recommended mounting torque: 8 Kg.cm.

Maximum Ratings, according to IEC publication No. 134

FBI2A

4S1

FBI2B

4S1

100

FBI2D FBI2G

4S1

200

140

400

280

FBI2J

4S1

600

420

FBI2K FBI2M

4S1

800

560

1000

700

RRM

RMS

F(AV)

FSM

DIS

stg

Peak recurrent reverse voltage (V)

Maximum RMS voltage (V)

Max. Average forward current with heatsink

without heatsink

8.3 ms. peak forward surge current

(Jedec Method)

4.5 A at 65 ºC

2.0 A at 25 ºC

60 A

15 A

sec

1500 V

– 55 to + 150 °C

– 55 to +150 ºC

Rating for fusing ( t<8.3 ms.)

Dielectric strength

(terminals to case, AC 1 min.)

Operating temperature range

Storage temperature range

Electrical Characteristics at Tamb = 25°C

th (j-c)

th (j-a)

Max. forward voltage drop per element at I

=2 A

Max. reverse current per element at V

RRM

MAXIMUM THERMAL RESISTANCE

Junction-Case. With Heatsink.

Junction-Ambient. Without Heatsink.

1.0 V

5 A

12 ºC/W

40 ºC/W

Jan - 00

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