PHOTODIODE
Si PIN photodiode
Plastic package
Available with 60 MHz to 500 MHz response speeds
Hamamatsu provides various types of Si PIN photodiodes molded into clear plastic packages. These photodiodes are available with cut-off
frequencies from 60 MHz to 500 MHz, allowing you to make the selection that best suits your application.
Features
Applications
l
Clear plastic package (4 × 4.8 mm)
l
2-pin lead style (lead length: 4.9 mm)
l
Choice of cut-off frequencies
l
Laser diode front monitors (high-speed APC) for optical
disk drives
l
Red laser diode (650 nm) and near IR laser diode (780 nm)
sensors
I
General ratings / Absolute maximum ratings
Type No.
S7329-01
S7836
S3321-04
S8223
S8314
S7762
Dimensional
outline
➀
➁
Plastic
Package
Active area
size
(mm)
2×2
1.1 × 1.1
f0.8
Effective active Reverse
area
voltage
V
4
Max.
(mm
2
)
(V)
4
1.2
0.5
20
Absolute maximum ratings
Power
Operating Storage
dissipation
temperature temperature
P
Topr
Tstg
(mW)
(°C)
(°C)
50
-25 to +85
-40 to +100
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
Short circuit
Spectral
Peak
S
current
response
sensitivity
(A/W)
lsc
range
wavelength
100
lx
l
lp
410 660 780 830
(µA)
nm nm nm nm
(nm)
(nm)
Min. Typ.
3.3
4.2
0.45 0.55 0.6
1.3 1.65
320 to
900 0.19
1060
0.39 0.48 0.5 0.6 0.75
320 to
1000
800
760
0.2
0.39 0.45
0.45 0.37
0.48 0.5
0.5
Type No.
S7329-01
S7836
S3321-04
S8223
S8314
S7762
*1: V
4
=5 V
*2: V
4
=2.5 V
Cut-off
Temp.
Terminal
Dark
coefficient
frequency
NEP
capacitance
current
fc
of
Ct
I
,
l=lp
l=780
nm
I
,
Max.
f=1 MHz
T
+1,
R
L
=50
9,
-3dB
(nA)
(times/°C)
(MHz)
(pF)
(W/Hz
1/2
)
60 *
1
12 *
1
4.8 × 10
-15
*
1
1
1
70 *
5*
3.9 × 10
-15
*
1
1
1*
80 *
1
3 *
1
4.1 × 10
-15
*
1
1.15
200 *
1
3 *
1
3.4 × 10
-15
*
1
0.3 *
1
500 *
1
4 *
1
3.9 × 10
-15
*
1
500 *
2
6 *
2
1.4 × 10
-15
*
2
0.3 *
2
1
Si PIN photodiode
I
Spectral response (1)
(Typ. Ta=25 ˚C)
0.7
S7836, S7329-01
0.6
QE=100 %
0.6
S7762
QE=100 %
0.7
Plastic package
(Typ. Ta=25 ˚C)
S3321-04
S7836
S7329-01
I
Spectral response (2)
(Typ. Ta=25 ˚C)
I
Dark current vs. reverse voltage
100 pA
PHOTO SENSITIVITY
(A/W)
0.5
PHOTO SENSITIVITY
(A/W)
0.5
DARK CURRENT
10 pA
S8314
S8223
1 pA
S7762
0.4
0.3
S3321-04
S8223
0.2
0.4
S8314
0.3
0.2
0.1
0
200
0.1
0
200
100 fA
0.01
400
600
800
1000
400
600
800
1000
0.1
1
10
100
WAVELENGTH
(nm)
KPINB0185EA
WAVELENGTH
(nm)
KPINB0189EB
REVERSE VOLTAGE (V)
KPINB0186EB
I
Cut-off frequency vs. reverse voltage
I
Terminal capacitance vs. reverse voltage
1000
(Typ. Ta=25 ˚C,
λ=780
nm, R
L
=50
Ω)
100 pF
(Typ. Ta=25 ˚C, f=1 MHz)
CUT-OFF FREQUENCY (MHz)
S7762
S8314
S8223
TERMINAL CAPACITANCE
S7329-01
S7836
S7762
10 pF
100
S3321-04
S7836
S7329-01
S8223
S8314
S3321-04
10
1
10
100
1 pF
0.1
1
10
100
REVERSE VOLTAGE (V)
KPINB0242EB
REVERSE VOLTAGE (V)
KPINB0188EB
I
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.1)
➀
S7329-01
CENTER OF
ACTIVE AREA
5.0 MAX.
(INCLUDING BURR)
4.7 *
1.8
0.8
➁
S7836, S3321-04, S8223, S8314, S7762
CENTER OF
ACTIVE AREA
5.0 MAX.
(INCLUDING BURR)
4.7 *
1.8
0.8
4.2 ± 0.2
(INCLUDING BURR)
4.2 ± 0.2
(INCLUDING BURR)
0.45
4.0 *
(2 ×) 5˚
(1.25)
PHOTOSENSITIVE
SURFACE
4.0 *
PHOTOSENSITIVE
SURFACE
(2 ×) 10˚
(2 ×) 5˚
(0.8) (1.25)
(2 ×) 10˚
4.9 ± 0.25
0.5
0.4
0.5
(0.8)
0.4
2.54
0.25
4.9 ± 0.25
0.5
a
2.54
0.25
PHOTOSENSITIVE
SURFACE
0.5
(2 ×) 10°
Chip position accuracy with respect
to the package dimensions marked *
X, Y
≤
±0.2
θ
≤
±2˚
PHOTOSENSITIVE
SURFACE
(2 ×) 10˚
Chip position accuracy with respect
to the package dimensions marked *
X, Y
≤
±0.2
θ
≤
±2˚
(2 ×) 5°
(2 ×) 5˚
a
KPINA0052EA
S8314
S7836
S3321-04 S7762
S8223
0.5
0.4
KPINA0085EC
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
2
Cat. No. KPIN1053E03
May 2002 DN
Industrial Control Electronics
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