RC28F256P33BFB datasheet, PDF - EEWORLD Datasheet

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RC28F256P33BFB: DescriptionFlash, 16MX16, 95ns, PBGA64; Categorystorage storage; File Size4MB，88 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/

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RC28F256P33BFB Overview

Flash, 16MX16, 95ns, PBGA64

RC28F256P33BFB Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum access time	95 ns
startup block	BOTTOM
command user interface	YES
Universal Flash Interface	YES
Data polling	NO
JESD-30 code	S-PBGA-B64
memory density	268435456 bit
Memory IC Type	FLASH
memory width	16
Number of departments/size	4,255
Number of terminals	64
word count	16777216 words
character code	16000000
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	16MX16
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Encapsulate equivalent code	BGA64,8X8,40
Package shape	SQUARE
Package form	GRID ARRAY
Parallel/Serial	PARALLEL
power supply	2.5/3.3 V
Certification status	Not Qualified
Department size	16K,64K
Maximum standby current	0.00021 A
Maximum slew rate	0.031 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	1 mm
Terminal location	BOTTOM
switch bit	NO
type	NOR TYPE
Base Number Matches	1

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Numonyx

Flash Memory (P33-65nm)

256-Mbit, 512-Mbit (256M/256M)

Datasheet

Product Features

High performance:

— 95ns initial access time for Easy BGA

— 105ns initial access time for TSOP

— 25ns 16-word asynchronous-page read

mode

— 52MHz (Easy BGA) with zero wait states,

17ns clock-to-data output synchronous-

burst read mode

— 4-, 8-, 16-, and continuous-word options

for burst mode

— Buffered Enhanced Factory Programming at

2.0MByte/s (typ) using 512-word buffer

— 3.0V buffered programming at 1.14 MByte/

s (Typ) using 512-word buffer

Architecture:

— Multi-Level Cell Technology: Highest

Density at Lowest Cost

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 128-KByte main blocks

— Blank Check to verify an erase block

Voltage and Power:

— V

(core) voltage: 2.3 V – 3.6 V

— V

CCQ

(I/O) voltage: 2.3 V – 3.6 V

— Standby current: 65uA (Typ) for 256-Mbit

— Continuous synchronous read current: 21

mA (Typ)/24 mA (Max) at 52 MHz

Security:

— One-Time Programmable Registers:

—

Absolute write protection: V

= V

Power-transition erase/program lockout

Individual zero-latency block locking

Individual block lock-down capability

Password Access feature

— 64 unique factory device identifier bits

— 2112 user-programmable OTP bits

Software:

— 25µs (Typ) program suspend

— 25µs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Function

Interface Command Set compatible

— Common Flash Interface capable

Density and Packaging

— 56-Lead TSOP package (256-Mbit only)

— 64-Ball Easy BGA package (256, 512-Mbit)

— 16-bit wide data bus

Quality and Reliability

— JESD47E Compliant

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— 65nm ETOX™ X process technology

Datasheet

Jul 2011

Order Number: 320003-10

INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR

OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND

CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED

WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A

PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx

products are not intended for use in medical, life saving, life sustaining, critical control or safety systems, or in nuclear facility applications.

Legal Lines and Disclaimers

Numonyx may make changes to specifications and product descriptions at any time, without notice.

Numonyx, B.V. may have patents or pending patent applications, trademarks, copyrights, or other intellectual property rights that relate to the

presented subject matter. The furnishing of documents and other materials and information does not provide any license, express or implied, by estoppel

or otherwise, to any such patents, trademarks, copyrights, or other intellectual property rights.

Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Numonyx reserves these for

future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them.

Contact your local Numonyx sales office or your distributor to obtain the latest specifications and before placing your product order.

Copies of documents which have an order number and are referenced in this document, or other Numonyx literature may be obtained by visiting

Numonyx's website at

http://www.numonyx.com.

Numonyx, the Numonyx logo, and are trademarks or registered trademarks of Numonyx, B.V. or its subsidiaries in other countries.

*Other names and brands may be claimed as the property of others.

Datasheet

Jul 2011

Order Number: 320003-10

P33-65nm

Contents

1.0

Functional Description

............................................................................................... 5

1.1

Introduction ....................................................................................................... 5

1.2

Overview ........................................................................................................... 5

1.3

Virtual Chip Enable Description.............................................................................. 6

1.4

Memory Maps ..................................................................................................... 7

Package Information

................................................................................................. 8

2.1

56-Lead TSOP..................................................................................................... 8

2.2

64-Ball Easy BGA Package .................................................................................... 9

Ballouts

................................................................................................................... 11

Signals

.................................................................................................................... 13

4.1

Dual-Die Configurations ..................................................................................... 14

Bus Operations

........................................................................................................ 15

5.1

Read ............................................................................................................... 15

5.2

Write ............................................................................................................... 15

5.3

Output Disable.................................................................................................. 15

5.4

Standby ........................................................................................................... 16

5.5

Reset............................................................................................................... 16

Command Set

.......................................................................................................... 17

6.1

Device Command Codes ..................................................................................... 17

6.2

Device Command Bus Cycles .............................................................................. 18

Read

7.1

7.2

7.3

7.4

Operation........................................................................................................

Asynchronous Page-Mode Read ........................................................................... 21

Synchronous Burst-Mode Read............................................................................ 21

Read Device Identifier........................................................................................ 22

Read CFI.......................................................................................................... 22

2.0

3.0

4.0

5.0

6.0

7.0

8.0

Program Operation

.................................................................................................. 23

8.1

Word Programming ........................................................................................... 23

8.2

Buffered Programming ....................................................................................... 23

8.3

Buffered Enhanced Factory Programming.............................................................. 24

8.4

Program Suspend .............................................................................................. 26

8.5

Program Resume............................................................................................... 27

8.6

Program Protection............................................................................................ 27

Erase Operation.......................................................................................................

9.1

Block Erase ...................................................................................................... 28

9.2

Blank Check ..................................................................................................... 28

9.3

Erase Suspend .................................................................................................. 29

9.4

Erase Resume................................................................................................... 29

9.5

Erase Protection ................................................................................................ 29

9.0

10.0 Security

................................................................................................................... 30

10.1 Block Locking.................................................................................................... 30

10.2 Selectable OTP Blocks ........................................................................................ 32

10.3 Password Access ............................................................................................... 32

11.0 Status Register

........................................................................................................ 33

11.1 Read Configuration Register................................................................................ 34

11.2 One-Time Programmable (OTP) Registers ............................................................. 40

12.0 Power and Reset Specifications

............................................................................... 43

Datasheet

Jul 2011

Order Number: 320003-10

P33-65nm

12.1

12.2

12.3

Power-Up and Power-Down .................................................................................43

Reset Specifications ...........................................................................................43

Power Supply Decoupling....................................................................................44

13.0 Maximum Ratings and Operating Conditions

............................................................45

13.1 Absolute Maximum Ratings .................................................................................45

13.2 Operating Conditions..........................................................................................45

14.0 Electrical Specifications

...........................................................................................46

14.1 DC Current Characteristics ..................................................................................46

14.2 DC Voltage Characteristics ..................................................................................47

15.0 AC Characteristics

....................................................................................................48

15.1 AC Test Conditions.............................................................................................48

15.2 Capacitance ......................................................................................................49

15.3 AC Read Specifications .......................................................................................49

15.4 AC Write Specifications .......................................................................................54

15.5 Program and Erase Characteristics .......................................................................58

16.0 Ordering Information...............................................................................................59

16.1 Discrete Products...............................................................................................59

16.2 SCSP Products...................................................................................................60

Supplemental Reference Information.......................................................................61

A.1

Common Flash Interface .....................................................................................61

A.2

Flowcharts ........................................................................................................72

A.3

Write State Machine ...........................................................................................81

Conventions - Additional Documentation

.................................................................85

B.1

Acronyms .........................................................................................................85

B.2

Definitions and Terms ........................................................................................85

Revision History.......................................................................................................87

Datasheet

Jul 2011

Order Number: 320003-10

P33-65nm

1.0

1.1

Functional Description

Introduction

This document provides information about the Numonyx

Flash Memory (P33-

65nm) device and describes its features, operations, and specifications.

P33-65nm is the latest generation of Numonyx

Flash Memory (P33-65nm)

devices. P33-65nm device will be offered in 64-Mbit up through 2-Gbit densities. This

document covers specifically 256-Mbit and 512-Mbit (256M/256M) product information.

Benefits include more density in less space, high-speed interface NOR device, and

support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options,

and two industry-standard package choices.

P33-65nm is manufactured using Numonyx™ 65nm process technology.

1.2

Overview

This family of devices provides high performance at low voltage on a 16-bit data bus.

Individually erasable memory blocks are sized for optimum code and data storage.

Upon initial power-up or return from reset, the device defaults to asynchronous page-

mode read. Configuring the RCR enables synchronous burst-mode reads. In

synchronous burst mode, output data is synchronized with a user-supplied clock signal.

A WAIT signal provides an easy CPU-to-flash memory synchronization.

In addition to the enhanced architecture and interface, the device incorporates

technology that enables fast factory program and erase operations. Designed for low-

voltage systems, the P33 Family Flash memory supports read operations with VCC at

3.0V, and erase and program operations with VPP at 3.0V or 9.0V. Buffered Enhanced

Factory Programming provides the fastest flash array programming performance with

VPP at 9.0V, which increases factory throughput. With VPP at 3.0V, VCC and VPP can be

tied together for a simple, ultra low power design. In addition to voltage flexibility, a

dedicated VPP connection provides complete data protection when VPP

≤

PPLK

The Command User Interface is the interface between the system processor and all

internal operations of the device. An internal Write State Machine automatically

executes the algorithms and timings necessary for block erase and program. A Status

An industry-standard command sequence invokes program and erase automation. Each

erase operation erases one block. The Erase Suspend feature allows system software to

pause an erase cycle to read or program data in another block. Program Suspend

allows system software to pause programming to read other locations. Data is

programmed in word increments (16 bits).

The P33 Family Flash memory one-time-programmable (OTP) register allows unique

flash device identification that can be used to increase system security. The individual

Block Lock feature provides zero-latency block locking and unlocking. The P33-65nm

device adds enhanced protection via Password Access Mode which allows user to

protect write and/or read access to the defined blocks. In addition, the P33 Family

Flash memory may also provide the OTP permanent lock feature full-device to the P33-

130nm device.

Datasheet

Jul 2011

Order Number:320003-10

RC28F256P33BFB Related Products

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Description	Flash, 16MX16, 95ns, PBGA64	Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56	Flash, 16MX16, 95ns, PBGA64, BGA-64	Flash, 16MX16, 95ns, PBGA64	Flash, 16MX16, 105ns, PDSO56, 14 X 20 MM, LEAD FREE, TSOP-56	Flash, 32MX16, 95ns, PBGA64, LEAD FREE, BGA-64	Flash, 16MX16, 95ns, PBGA64, LEAD FREE, BGA-64	Flash, 16MX16, 95ns, PBGA64, BGA-64	Flash, 16MX16, 95ns, PBGA64, LEAD FREE, BGA-64	Flash, 32MX16, 95ns, PBGA64, BGA-64
Is it Rohs certified?	incompatible	conform to	incompatible	conform to	conform to	conform to	conform to	incompatible	conform to	incompatible
Reach Compliance Code	unknown	compliant	not_compliant	compliant	compliant	compliant	compliant	not_compliant	compliant	_compli
Maximum access time	95 ns	105 ns	95 ns	95 ns	105 ns	95 ns	95 ns	95 ns	95 ns	95 ns
startup block	BOTTOM	BOTTOM	BOTTOM	BOTTOM	TOP	BOTTOM/TOP	TOP	TOP	BOTTOM	BOTTOM/TOP
command user interface	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Universal Flash Interface	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Data polling	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
JESD-30 code	S-PBGA-B64	R-PDSO-G56	R-PBGA-B64	S-PBGA-B64	R-PDSO-G56	R-PBGA-B64	R-PBGA-B64	R-PBGA-B64	R-PBGA-B64	R-PBGA-B64
memory density	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	536870912 bit	268435456 bit	268435456 bit	268435456 bit	536870912 bi
Memory IC Type	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
memory width	16	16	16	16	16	16	16	16	16	16
Number of departments/size	4,255	4,255	4,255	4,255	4,255	8, 510	4,255	4,255	4,255	8, 510
Number of terminals	64	56	64	64	56	64	64	64	64	64
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	33554432 words	16777216 words	16777216 words	16777216 words	33554432 words
character code	16000000	16000000	16000000	16000000	16000000	32000000	16000000	16000000	16000000	32000000
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	16MX16	16MX16	16MX16	16MX16	16MX16	32MX16	16MX16	16MX16	16MX16	32MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	BGA	TSSOP	TBGA	BGA	TSSOP	TBGA	TBGA	TBGA	TBGA	TBGA
Encapsulate equivalent code	BGA64,8X8,40	TSSOP56,.8,20	BGA64,8X8,40	BGA64,8X8,40	TSSOP56,.8,20	BGA64,8X8,40	BGA64,8X8,40	BGA64,8X8,40	BGA64,8X8,40	BGA64,8X8,40
Package shape	SQUARE	RECTANGULAR	RECTANGULAR	SQUARE	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	GRID ARRAY, THIN PROFILE	GRID ARRAY	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE	GRID ARRAY, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Department size	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K	16K,64K
Maximum standby current	0.00021 A	0.00021 A	0.00021 A	0.00021 A	0.00021 A	0.00042 A	0.00021 A	0.00021 A	0.00021 A	0.00042 A
Maximum slew rate	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA	0.031 mA
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	BALL	GULL WING	BALL	BALL	GULL WING	BALL	BALL	BALL	BALL	BALL
Terminal pitch	1 mm	0.5 mm	1 mm	1 mm	0.5 mm	1 mm	1 mm	1 mm	1 mm	1 mm
Terminal location	BOTTOM	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
switch bit	NO	NO	NO	NO	NO	NO	NO	NO	NO	NO
type	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
Is it lead-free?	-	Lead free	Contains lead	-	Lead free	Lead free	Lead free	Contains lead	Lead free	Contains lead
Maker	-	Micron Technology	-	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
Parts packaging code	-	TSOP	BGA	-	TSOP	BGA	BGA	BGA	BGA	BGA
package instruction	-	TSSOP, TSSOP56,.8,20	BGA-64	BGA, BGA64,8X8,40	TSSOP, TSSOP56,.8,20	LEAD FREE, BGA-64	LEAD FREE, BGA-64	BGA-64	LEAD FREE, BGA-64	BGA-64
Contacts	-	56	64	-	56	64	64	64	64	64
ECCN code	-	3A991.B.1.A	3A991.B.1.A	-	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A	3A991.B.1.A
Other features	-	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	-	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	TOP BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE
JESD-609 code	-	e3	e0	-	e3	e1	e1	e0	e1	e0
length	-	18.4 mm	13 mm	-	18.4 mm	13 mm	13 mm	13 mm	13 mm	13 mm
Number of functions	-	1	1	-	1	1	1	1	1	1
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Peak Reflow Temperature (Celsius)	-	260	235	-	260	260	260	235	260	235
Programming voltage	-	2.7 V	2.7 V	-	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
Maximum seat height	-	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	-	2.3 V	2.3 V	-	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
Nominal supply voltage (Vsup)	-	3 V	3 V	-	3 V	3 V	3 V	3 V	3 V	3 V
Terminal surface	-	MATTE TIN	TIN LEAD SILVER	-	MATTE TIN	TIN SILVER COPPER	TIN SILVER COPPER	TIN LEAD SILVER	Tin/Silver/Copper (Sn/Ag/Cu)	TIN LEAD SILVER
Maximum time at peak reflow temperature	-	30	30	-	30	30	30	30	30	30
width	-	14 mm	10 mm	-	14 mm	10 mm	10 mm	10 mm	10 mm	10 mm

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