FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
Ultrafast Plastic Rectifier
TO-220AC
ITO-220AC
FEATURES
• Glass passivated chip junction
• Ultrafast recovery time
• Low switching losses, high efficiency
• Low leakage current
2
FES8xT
PIN 1
PIN 2
2
1
FESF8xT
PIN 1
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
of 245 °C (for TO-263AB package)
• Solder Dip 260 °C, 40 seconds (for TO-220AC &
ITO-220AC package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, inverters, freewheeling diodes,
dc-to-dc converters, and other power switching
application.
MECHANICAL DATA
Case:
TO-220AC, ITO-220AC, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
1
CASE
PIN 2
TO-263AB
K
2
1
FESB8xT
PIN 1
PIN 2
K
HEATSINK
MAJOR RATINGS AND CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
8.0 A
50 V to 600 V
125 A
35 ns, 50 ns
0.95 V, 1.30 V, 1.50 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 100 °C
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
Operating storage and temperature range
Isolation voltage (ITO-220AC only)
From terminal to heatsink t =1 minute
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
V
AC
200
- 55 to + 150
1500
FES
8AT
50
35
50
FES
8BT
100
70
100
FES
8CT
150
105
150
FES
8DT
200
140
200
8.0
125
FES
8FT
300
210
300
FES
8GT
400
280
400
FES
8HT
500
350
500
FES
8JT
600
420
600
UNIT
V
V
V
A
A
°C
V
Document Number 88600
27-Jun-06
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FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
V
F
T
C
= 25 °C
T
C
= 100 °C
at I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
at 4 V, 1 MHz
FES
8AT
FES
8BT
FES
8CT
FES
8DT
FES
8FT
1.3
10
500
35
85
50
50
FES
8GT
FES
8HT
1.5
FES
8JT
UNIT
V
Maximum instantaneous
at 8.0 A
forward voltage
(1)
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
0.95
I
R
µA
t
rr
C
J
ns
pF
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance from junction to case
SYMBOL
R
θJC
FES
2.2
FESF
5.0
FESB
2.2
UNIT
°C/W
ORDERING INFORMATION
PACKAGE
TO-220AC
ITO-220AC
TO-263AB
TO-263AB
PREFERRED P/N
FES8JT-E3/45
FESF8JT-E3/45
FESB8JT-E3/45
FESB8JT-E3/81
UNIT WEIGHT (g)
1.80
1.85
1.33
1.33
PACKAGE CODE
45
45
45
81
BASE QUANTITY
50/Tube
50/Tube
50/Tube
800/Reel
DELIVERY MODE
Tube
Tube
Tube
Tape Reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Average Forward Rectified Current (A)
10
Resistive or Inductive Load
150
Peak Forward Surge Current (A)
8
Heatsink, Case Temperature, T
C
6
Free Air, Ambient Temperature, T
A
4
125
T
C
= 100 °C
8.3
ms Single Half Sine-Wave
100
75
50
2
25
0
0
0
50
100
150
1
10
100
Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 88600
27-Jun-06
FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
40
1000
Pulse
Width
= 300
µs
1
%
Duty Cycle
T
j
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
j
= 25 °C
T
j
= 125 °C
Junction Capacitance (pF)
100
1.0
50 - 200
V
300 - 400
V
500 - 600
V
0.1
0.2
0.6
1.0
1.4
1.8
50 - 200
V
500 - 600
V
10
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
Instantaneous Reverse Leakage
Current (µA)
T
j
= 125 °C
10
1
T
j
= 100 °C
50 - 200
V
500 - 600
V
0.1
T
j
= 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse
Voltage
(%)
Figure 4. Typical Reverse Leakage Characteristics
Document Number 88600
27-Jun-06
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FES(F,B)8AT thru FES(F,B)8JT
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AC
0.415 (10.54)MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
PIN 1
PIN 2
CASE
ITO-220AC
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.404
0.384
0.076
(1.93)
45° Ref.
(10.26)
(9.75)
Ref.
ref.
See note
See note
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
7° Ref.
0.076 Ref.
(1.93) Ref. 0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.671 (17.04)
7° Ref.
0.651 (16.54)
0.350 (8.89)
0.330 (8.38)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.635 (16.13)
0.625 (15.87)
0.603 (15.32)
0.573 (14.55)
0.600 (15.24)
0.580 (14.73)
PIN
2
1
Copper exposure
0.010 (0.25) Max.
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
7° Ref.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027(0.68)
0.205(5.20)
0.195(4.95)
0.022(0.56)
0.014(0.36)
0.025 (0.64)
0.015 (0.38)
0.035 (0.89)
0.025 (0.64)
0.205 (5.21)
0.195 (4.95)
0.028 (0.71)
0.020 (0.51)
Note:
Copper exposure is allowable for 0.005 (0.13) Max. from the
body
TO-263AB
0.41 (10.45)
1
0.380 (9.65)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42
MIN.
(10.66)
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.047 (1.19)
0.670 (17.02)
0.591 (15.00)
0.33
(8.38)
MIN.
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.140 (3.56)
0.110 (2.79)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.15
(3.81)
MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
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Document Number 88600
27-Jun-06
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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