MTH50N05E datasheet, PDF - EEWORLD Datasheet

MTH50N05E: Description50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC; CategoryDiscrete semiconductor The transistor; File Size202KB，6 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MTH50N05E Overview

50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	50 V
Maximum drain current (ID)	50 A
Maximum drain-source on-resistance	0.028 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	400 pF
JEDEC-95 code	TO-218AC
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	125 W
Maximum pulsed drain current (IDM)	160 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	95 ns
Maximum opening time (tons)	85 ns

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