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BZT52C3V3-T1

Description
Zener Diode, 3.3V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size77KB,5 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

BZT52C3V3-T1 Overview

Zener Diode, 3.3V V(Z), 5%, 0.41W, Silicon, Unidirectional, PLASTIC PACKAGE-2

BZT52C3V3-T1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance95 Ω
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.41 W
Nominal reference voltage3.3 V
surface mountYES
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Base Number Matches1
WTE
POWER SEMICONDUCTORS
BZT52C2V4 – BZT52C51
Pb
410mW SURFACE MOUNT ZENER DIODE
Features
!
!
!
!
!
!
Planar Die Construction
A
SOD-123
Dim
A
Min
3.6
2.5
1.4
0.5
0.4
0.95
Max
3.9
2.8
1.8
0.7
0.2
1.35
0.12
410mW Power Dissipation
2.4 – 51V Nominal Zener Voltage
5% Standard Vz Tolerance
Designed for Surface Mount Application
C
Plastic Material – UL Recognition Flammability
Classification 94V-O

E
D
B
B
C
D
E
G
H
J
Mechanical Data
!
!
!
!
!
!
Case: SOD-123, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.01 grams (approx.)
Marking: Device Code, See Page 2
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 5
G
H
J
All Dimensions in mm
Maximum Ratings
@T
A
=25°C unless otherwise specified
Characteristic
Peak Pulse Power Dissipation at T
A
= 25°C (Note 1)
Forward Voltage @ I
F
= 10mA
Thermal Resistance Junction to Ambient (Note 1)
Operating and Storage Temperature Range
Note: 1. Diode on ceramic substrate 10mm x 8mm x 0.7mm.
Symbol
P
d
V
F
R
JA
T
j
, T
STG
Value
410
0.9
300
-65 to +150
Unit
mW
V
°C/W
°C
BZT52C2V4 – BZT52C51
1 of 5
© 2006 Won-Top Electronics
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