IRHYB597Z30CMSCS datasheet, PDF

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IRHYB597Z30CMSCS: DescriptionPower Field-Effect Transistor,; CategoryDiscrete semiconductor The transistor; File Size391KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRHYB597Z30CMSCS Overview

Power Field-Effect Transistor,

IRHYB597Z30CMSCS Parametric

Parameter Name	Attribute value
package instruction	IN-LINE, R-XSIP-P3
Reach Compliance Code	compliant
Avalanche Energy Efficiency Rating (Eas)	200 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	20 A
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.072 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	114 pF
JEDEC-95 code	TO-257AA
JESD-30 code	R-XSIP-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	80 A
Guideline	MIL-19500
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	120 ns
Maximum opening time (tons)	125 ns
Base Number Matches	1

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PD-95819B

IRHYB597Z30CM

RADIATION HARDENED

POWER MOSFET

THRU-HOLE (Low-Ohmic TO-257AA Tabless)

Product Summary

Part Number

IRHYB597Z30CM

IRHYB593Z30CM

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.072

-20A*

Low-Ohmic

TO-257AA Tabless

30V, P-CHANNEL

TECHNOLOGY

Description

IRHYB597Z30CM is a part of the International Rectifier

HiRel family of products. IR HiRel R5 technology

provides high performance power MOSFETs for space

applications. These devices have been characterized

for both Total Dose and Single Event Effect (SEE) with

useful performance up to LET of 80 (MeV/(mg/cm

). The

combination of low R

(on) and low gate charge reduces

the power losses in switching applications such as DC-

DC converters and motor controllers. These devices

retain all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paralleling

and temperature stability of electrical parameters.

Features



Single Event Effect (SEE) Hardened

Fast Switching

Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Light Weight

ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Parameter

@ V

= -12V, T

= 25°C

dv/dt

STG

Continuous Drain Current

Pulsed Drain Current



Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy



Avalanche Current



Repetitive Avalanche Energy



Peak Diode Recovery dv/dt



Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

*Current is limited by package

For Footnotes refer to the page 2.

International Rectifier HiRel Products, Inc.

-20*

-18

-80

0.6

± 20

200

-20

7.5

-1.84

-55 to + 150

@ V

= -12V, T

= 100°C Continuous Drain Current

Pre-Irradiation

Units

W/°C

V/ns

°C

300 (0.063 in./1.6 mm from case for 10s)

3.7 (Typical)

2017-07-17

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