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BZW04-5V8

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size65KB,4 Pages
ManufacturerMDE Semiconductor
Websitehttp://www.mdesemiconductor.com
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BZW04-5V8 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE

BZW04-5V8 Parametric

Parameter NameAttribute value
MakerMDE Semiconductor
Reach Compliance Codeunknow
Base Number Matches1
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel: 760-564-8656 • Fax: 760-564-2414
1-800-831-4881 Email: sales@mdesemicondutor.com Web: www.mdesemiconductor.com
BZW04 SERIES
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE-6.8 TO 376 Volts
400 Watt Peak Pulse Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
• Glass passivated chip junction in DO-41 package
• 400W surge capability at 1ms
• Excellent clamping capability
• Low zener impedance
• Low incremental surge resistance
• Excellent clamping capability
• Fast response time: typically less than
1.0 ps from 0 volts to BV min
• Typical I
R
less than 1µA above 10V
• High temperature soldering guaranteed:
300°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
MECHANICAL DATA
Case: JEDEC DO-41 Molded plastic
Terminals: Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.012 ounces, 0.3 grams
Dimensions in inches (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types BZW-04-5V8 thru types BZW04-376 (e.g. BZW04-5V8B, BZW04-376B)
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For Capacitive load, derate current by 20%
RATING
Peak Pulse Power Dissipation at T
A
= 25 °C, T
P
= 1ms
(NOTE 1)
SYMBOL
P
PPM
Ippm
Lead
VALUE
Minimum 400
SEE TABLE 1
1.0
40
-55 +175
UNITS
Watts
Amps
Watts
Amps
°C
Peak Pulse Current of on 10/1000 µs waveform
(Note 1)
Steady State Power Dissipation at
T
L
= 75°C
lengths .375", 9.5mm
(Note 2)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load,
(JEDEC Method)(Note 3)
Operatings and Storage Temperature Range
NOTES:
P
M
(AV)
I
FSM
T
J
, T
STG
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 1.6x1.6" (40x40mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.

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Description 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AL
Maker MDE Semiconductor MDE Semiconductor MDE Semiconductor MDE Semiconductor
Reach Compliance Code unknow unknow unknow unknow

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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