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MA5J002D

Description
Rectifier Diode, 4 Element, 0.1A, Silicon, ROHS COMPLIANT, SMINI5-F1, 5 PIN
CategoryDiscrete semiconductor    diode   
File Size74KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance  
Download Datasheet Parametric View All

MA5J002D Overview

Rectifier Diode, 4 Element, 0.1A, Silicon, ROHS COMPLIANT, SMINI5-F1, 5 PIN

MA5J002D Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionR-PDSO-F5
Contacts5
Manufacturer packaging codeSMINI5-F1
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F5
JESD-609 codee6
Humidity sensitivity level1
Number of components4
Number of terminals5
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum reverse recovery time0.005 µs
surface mountYES
Terminal surfaceTin/Bismuth (Sn/Bi)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
Switching Diodes
MA5J002D
Silicon epitaxial planar type
For high speed switching circuits
Features
Includes 4 elements of anode common connection
Parts reduction is possible
Ideal for surge voltage absorption
1
2
2.0
±0.1
(0.65) (0.65)
5
4
1.25
±0.1
2.1
±0.1
Unit: mm
0.7
±0.1
3
0.2
±0.05
0.16
+0.1
–0.06
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
*1
Peak forward current
*1
Non-repetitive peak forward
surge current
*1, 2
Junction temperature
Storage temperature
Note) *1: Value in single diode used.
*2: t
=
1 s
Symbol
V
R
V
RM
I
F
I
FM
I
FSM
T
j
T
stg
Rating
80
80
100
225
500
150
−55
to
+150
Unit
(0.15)
V
V
mA
mA
mA
°C
°C
1: Cathode 1
2: Anode 1, 2, 3, 4
0 to 0.1
3: Cathode 2
4: Cathode 3
5: Cathode 4
SMini5-F 1 Package
Marking Symbol: M5C
Internal Connection
5
4
1
2
3
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Forward voltage
Reverse voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F
V
R
I
R
C
t
t
rr
I
R
=
100
µA
V
R
=
70 V
V
R
=
0 V, f
=
1 MHz
I
F
=
10 mA, V
R
=
6 V
I
rr
=
0.1 I
R
, R
L
=
100
Conditions
I
F
=
100 mA
80
100
3.5
5.0
Min
Typ
Max
1.3
Unit
V
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: t
rr
measurement circuit
Bias Application Unit N-50BU
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
0.1 I
R
I
F
=
10 mA
V
R
=
6 V
R
L
=
100
Output Pulse
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Publication date: November 2003
Wave Form Analyzer
(SAS-8130)
R
i
=
50
SKF00060BED
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
(0.425)
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