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THMD12N11B75

Description
IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM
Categorystorage    storage   
File Size936KB,17 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

THMD12N11B75 Overview

IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM

THMD12N11B75 Parametric

Parameter NameAttribute value
package instructionDIMM, DIMM184
Reach Compliance Codeunknown
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time0.75 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)133 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
memory density1073741824 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals184
word count16777216 words
character code16000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply2.5 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Base Number Matches1

THMD12N11B75 Related Products

THMD12N11B75 THMD12N11B80 THMD12N11B70
Description IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM IC 16M X 64 DDR DRAM MODULE, 0.8 ns, DMA184, Dynamic RAM IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM
package instruction DIMM, DIMM184 DIMM, DIMM184 DIMM, DIMM184
Reach Compliance Code unknown unknown unknown
access mode SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST SINGLE BANK PAGE BURST
Maximum access time 0.75 ns 0.8 ns 0.75 ns
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
Maximum clock frequency (fCLK) 133 MHz 125 MHz 143 MHz
I/O type COMMON COMMON COMMON
JESD-30 code R-XDMA-N184 R-XDMA-N184 R-XDMA-N184
memory density 1073741824 bit 1073741824 bit 1073741824 bit
Memory IC Type DDR DRAM MODULE DDR DRAM MODULE DDR DRAM MODULE
memory width 64 64 64
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 184 184 184
word count 16777216 words 16777216 words 16777216 words
character code 16000000 16000000 16000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C
organize 16MX64 16MX64 16MX64
Output characteristics 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM
Encapsulate equivalent code DIMM184 DIMM184 DIMM184
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 2.5 V 2.5 V 2.5 V
Certification status Not Qualified Not Qualified Not Qualified
refresh cycle 8192 8192 8192
self refresh YES YES YES
Maximum supply voltage (Vsup) 2.7 V 2.7 V 2.7 V
Minimum supply voltage (Vsup) 2.3 V 2.3 V 2.3 V
Nominal supply voltage (Vsup) 2.5 V 2.5 V 2.5 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL
ECCN code EAR99 EAR99 -
Maker - Toshiba Semiconductor Toshiba Semiconductor
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