IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM
| Parameter Name | Attribute value |
| package instruction | DIMM, DIMM184 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| access mode | SINGLE BANK PAGE BURST |
| Maximum access time | 0.75 ns |
| Other features | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 133 MHz |
| I/O type | COMMON |
| JESD-30 code | R-XDMA-N184 |
| memory density | 1073741824 bit |
| Memory IC Type | DDR DRAM MODULE |
| memory width | 64 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 184 |
| word count | 16777216 words |
| character code | 16000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 16MX64 |
| Output characteristics | 3-STATE |
| Package body material | UNSPECIFIED |
| encapsulated code | DIMM |
| Encapsulate equivalent code | DIMM184 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| power supply | 2.5 V |
| Certification status | Not Qualified |
| refresh cycle | 8192 |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | DUAL |
| Base Number Matches | 1 |
| THMD12N11B75 | THMD12N11B80 | THMD12N11B70 | |
|---|---|---|---|
| Description | IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM | IC 16M X 64 DDR DRAM MODULE, 0.8 ns, DMA184, Dynamic RAM | IC 16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184, Dynamic RAM |
| package instruction | DIMM, DIMM184 | DIMM, DIMM184 | DIMM, DIMM184 |
| Reach Compliance Code | unknown | unknown | unknown |
| access mode | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST | SINGLE BANK PAGE BURST |
| Maximum access time | 0.75 ns | 0.8 ns | 0.75 ns |
| Other features | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| Maximum clock frequency (fCLK) | 133 MHz | 125 MHz | 143 MHz |
| I/O type | COMMON | COMMON | COMMON |
| JESD-30 code | R-XDMA-N184 | R-XDMA-N184 | R-XDMA-N184 |
| memory density | 1073741824 bit | 1073741824 bit | 1073741824 bit |
| Memory IC Type | DDR DRAM MODULE | DDR DRAM MODULE | DDR DRAM MODULE |
| memory width | 64 | 64 | 64 |
| Number of functions | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 |
| Number of terminals | 184 | 184 | 184 |
| word count | 16777216 words | 16777216 words | 16777216 words |
| character code | 16000000 | 16000000 | 16000000 |
| Operating mode | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C |
| organize | 16MX64 | 16MX64 | 16MX64 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIMM | DIMM | DIMM |
| Encapsulate equivalent code | DIMM184 | DIMM184 | DIMM184 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| power supply | 2.5 V | 2.5 V | 2.5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 8192 | 8192 | 8192 |
| self refresh | YES | YES | YES |
| Maximum supply voltage (Vsup) | 2.7 V | 2.7 V | 2.7 V |
| Minimum supply voltage (Vsup) | 2.3 V | 2.3 V | 2.3 V |
| Nominal supply voltage (Vsup) | 2.5 V | 2.5 V | 2.5 V |
| surface mount | NO | NO | NO |
| technology | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal form | NO LEAD | NO LEAD | NO LEAD |
| Terminal pitch | 1.27 mm | 1.27 mm | 1.27 mm |
| Terminal location | DUAL | DUAL | DUAL |
| ECCN code | EAR99 | EAR99 | - |
| Maker | - | Toshiba Semiconductor | Toshiba Semiconductor |