STB/P8444
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
40V
FEATURES
Super high dense cell design for low R
DS(ON)
.
Rugged and reliable.
TO-220 and TO-263 Package.
I
D
80A
R
DS(ON)
(m
Ω
) Max
4.8
@
VGS=10V
D
D
G
S
G
D
S
G
STP SERIES
TO-220
STB SERIES
TO-263(DD-PAK)
S
ABSOLUTE MAXIMUM RATINGS (
T
A
=25
°
C unless otherwise noted
)
Symbol
V
DS
V
GS
I
D
I
DM
E
AS
P
D
T
J,
T
STG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
-Pulsed
b
d
a
Limit
40
±20
T
C
=25°C
80
264
306
T
C
=25°C
62
-55 to 150
Units
V
V
A
A
mJ
W
°C
Sigle Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R
JC
Thermal Resistance, Junction-to-Case
R
JA
Thermal Resistance, Junction-to-Ambient
1.8
62.5
°C/W
°C/W
Details are subject to change without notice.
Mar,26,2008
1
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STB/P8444
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
4
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
Drain-Source On-State Resistance
R
DS(ON)
g
FS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
c
V
GS
=0V , I
D
=250uA
V
DS
=32V , V
GS
=0V
40
1
±100
uA
nA
V
GS
= ±20V , V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=10V , I
D
=80A
V
DS
=5V , I
D
=80A
2
2.8
3.5
20
4
4.8
V
m ohm
S
V
DS
=20V,V
GS
=0V
f=1.0MHz
6500
940
500
pF
pF
pF
V
DD
=20V
I
D
=1A
V
GS
=10V
R
GEN
=6 ohm
V
DS
=20V,I
D
=25A,V
GS
=10V
V
DS
=20V,I
D
=25A,
V
GS
=10V
185
162
185
50
110
20
26
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
V
SD
V
GS
=0V,I
S
=10A
Diode Forward Voltage
0.8
1.3
V
Notes
a.Maximum wire current carrying capacity is 80A.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting T
J
=25
°
C,L=0.5mH,R
G
=25
Ω
,I
AS
=35A,V
DD
= 20V.(See Figure13)
Mar,26,2008
2
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STB/P8444
Ver 1.0
120
20
16
V
G S
=10V
I
D
, Drain Current(A)
I
D
, Drain Current(A)
96
72
V
G S
=6V
V
G S
=5V
12
25 C
8
Tj=125 C
4
-55 C
48
24
0
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
7
2.0
Figure 2. Transfer Characteristics
5
4
3
2
1
V
G S
=10V
R
DS(ON)
, On-Resistance
Normalized
6
1.8
1.6
1.4
1.2
1.0
0.0
V
G S
=10V
I
D
= 80 A
R
DS(on)
(m
W
)
1
24
48
72
96
120
0
25
50
75
100
125
150
Tj( C)
I
D
, Drain Current (A)
Tj, Junction Temperature ( C)
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-50 -25
0
25
50
75
100 125 150
V
DS
=V
G S
I
D
=250uA
Figure 4. On-Resistance Variation with
Drain Current and Temperature
1.3
I
D
=250uA
1.2
1.1
1.0
0.9
0.8
0.7
-50
-25
0
25
50
75
100 125 150
Tj, Junction Temperature ( C)
BV
DSS
, Normalized
Drain-Source Breakdown Voltage
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Mar,26,2008
3
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STB/P8444
Ver 1.0
12
20.0
I
D
=80 A
Is, Source-drain current (A)
10
10.0
R
DS(on)
(m
W
)
8
6
4
75 C
2
0
25 C
125 C
125
125 C
25 C
75 C
0
2
4
6
8
10
1.0
0.0
0.2
0.4
0.6
0.8
1.0
V
GS
, Gate-Sorce Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
9000
7500
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
V
GS
, Gate to Source Voltage (V)
C, Capacitance (pF)
Cis s
8
6
4
2
0
V
DS
= 20V
I
D
= 25A
6000
4500
3000
1500
0
0
C rs s
5
10
15
20
25
30
Cos s
0
20
40
60
80 100 120 140 160
V
DS
, Drain-to Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
2200
Tr
1000
it
10
1m
10
DC
m
s
s
Switching Time (ns)
I
D
, Drain Current (A)
1000
600
100
TD(off)
100
R
TD(on)
DS
(O
L
N)
im
0u
s
Tf
10
V
G S
=10V
S ingle P ulse
T c=25 C
10
1
V DS =20V ,ID=1A
V G S =10V
6 10
60 100
300 600
1
0.1
1
10
100
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage (V)
Figure 11.switching characteristics
Figure 12. Maximum Safe
Operating Area
Mar,26,2008
4
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STB/P8444
Ver 1.0
15V
V (B R )
DS S
tp
DR IV E R
V
DS
L
R
G
20V
D.U.T
I
AS
tp
0.01
+
V
DD
-
I
AS
Unclamped Inductive Waveforms
Figure 13b.
Unclamped Inductive Test Circuit
Figure 13a.
2
1
D=0.5
r(t),Normalized E ffective
T ransient T hermal Impedance
0.2
0.1
0.1
0.05
0.02
0.01
S ingle P uls e
P
DM
t
1
t
2
1.
2.
3.
4.
R
J C
(t)=r (t) * R
J C
R
J C
=S ee Datas heet
T
J M-
T
C
= P * R
J C
(t )
Duty C ycle, D=t1/t2
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
S quare Wave P uls e Duration (ms ec)
F igure 14. Normalized T hermal T rans ient Impedance C urve
Mar,26,2008
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