DIM800DDS12-A000
Dual Switch IGBT Module
DS5540-2.2 June 2005
(LN24051)
FEATURES
•
•
•
•
10µs Short Circuit Withstand
Non Punch Through Silicon
Isolated Copper Baseplate
KEY PARAMETERS
V
CES
V
CE (sat)*
(typ)
I
C
(max)
I
C(PK)
(max)
*
1200V
2.2V
800A
1600A
Lead Free construction
(measured at the power busbars and not the auxiliary terminals)
APPLICATIONS
•
•
High Power Inverters
Motor Controllers
The Powerline range of high power modules
includes half bridge, chopper, dual, single and bi-
directional switch configurations covering voltages
from 600V to 3300V and currents up to 2400A.
The DIM800DDS12-A000 is a dual switch 1200V, n
channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus full
10µs short circuit withstand.
The module incorporates an electrically isolated
base plate and low inductance construction enabling
circuit designers to optimise circuit layouts and
utilise grounded heat sinks for safety.
Fig. 1 Dual switch circuit diagram
ORDERING INFORMATION
Order As:
DIM800DDS12-A000
Note: When ordering, please use the whole part number.
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections (not to scale)
.
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM800DDS12-A000
SEMICONDUCTOR
ABSOLUTE MAXIMUM RATINGS – PER ARM
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device.
In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the
package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings
may affect device reliability.
Tcase = 25° C unless stated otherwise
Symbol
V
CES
V
GES
I
C
I
C(PK)
P
max
It
V
isol
2
Parameter
Collector-emitter voltage
Gate-emitter voltage
Continuous collector current
Peak collector current
Max. transistor power dissipation
Diode I t value
Isolation voltage – per module
2
Test Conditions
V
GE
= 0V
Max.
1200
±20
Units
V
V
A
A
W
kA S
V
2
T
case
= 85° C
1ms, T
case
=115° C
T
case
= 25° C, T = 150° C
j
V
R
= 0, t
P
= 10ms, T
vj
= 125° C
Commoned terminals to base plate. AC RMS, 1 min, 50Hz
800
1600
6940
100
2500
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDS12-A000
SEMICONDUCTOR
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
Baseplate material:
Creepage distance:
Clearance:
CTI (Critical Tracking Index):
Al
2
O
3
Copper
20mm
10mm
175
Symbol
Parameter
Thermal resistance – transistor
(per arm)
Test Conditions
Min.
Typ.
Max.
Units
R
th(j-c)
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
-
-
18
° C/kW
R
th(j-c)
Thermal resistance – diode (per arm)
-
-
40
° C/kW
R
th(c-h)
Thermal resistance – case to heatsink
(per module)
Mounting torque 5Nm
(with mounting grease)
Transistor
Diode
-
-
8
° C/kW
T
j
Junction temperature
-
-
-
-40
-
-
-
-
-
-
-
-
-
150
125
125
5
2
10
°C
°C
°C
Nm
Nm
Nm
T
stg
-
Storage temperature range
Screw torque
Mounting – M6
Electrical connections – M4
Electrical connections – M8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
T
case
= 25° C unless stated otherwise.
Symbol
I
ces
Parameter
Collector cut-off current
Test Conditions
V
GE
= OV, V
CE
= V
CES
V
GE
= OV, V
CE
= V
CES
, T
case
= 125° C
Min.
-
-
-
4.5
-
-
-
-
-
-
-
-
-
I
1
I
2
-
-
Typ.
-
-
-
5.5
2.2
2.6
-
-
2.1
2.1
90
20
0.27
5500
4500
Max.
1
25
4
6.5
2.8
3.2
800
1600
2.4
2.4
-
-
-
-
-
Units
mA
mA
µA
V
V
V
A
A
V
V
nF
nH
mΩ
A
A
I
ces
V
GE(TH)
Gate leakage current
Gate threshold voltage
Collector-emitter saturation voltage
V
GE
= ±20V, V
CE
= 0V
I
C
= 40mA, V
GE
= V
CE
V
GE
= 15V, I
C
= 800A
V
GE
= 15V, I
C
= 800A, T
case
= 125° C
V
CE(sat)
I
F
I
FM
Diode forward current
Diode maximum forward current
Diode forward voltage
DC
t
p
= 1ms
I
F
= 800A
I
F
= 800A, T
case
= 125° C
V
F
C
ies
L
M
R
INT
SC
Data
Input capacitance
Module inductance
Internal transistor resistance
Short circuit. I
sc
V
CE
= 25V, V
GE
= 0V, f = 1MHz
-
-
T
j
= 125° C, V
cc
= 900V,
t
p
≤
10µs,
V
CE(max)
= V
CES
- L* × di/dt
IEC 60747-9
Note:
Measured at the power busbars and not the auxiliary terminals
* L is the circuit inductance + L
M
¡
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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DIM800DDS12-A000
SEMICONDUCTOR
ELECTRICAL CHARACTERISTICS
T
case
= 25° C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
O
Q
g
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 800A, V
R
= 600V,
dl
F
/dt = 4200A/µs
Test Conditions
I
C
= 800A
V
GE
= ±15V
V
CE
=600V
R
G(ON)
= R
G(OFF)
= 2.7Ω
L
∼
100nH
Min.
-
-
-
-
-
-
-
-
-
-
Typ.
1250
170
130
250
250
80
9
80
380
30
Max.
-
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
µC
A
mJ
T
case
= 125° C unless stated otherwise.
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
I
F
= 800A, V
R
= 600V,
dl
F
/dt = 4000A/µs
Test Conditions
I
C
= 800A
V
GE
= ±15V
V
CE
= 600V
R
G(ON)
= R
G(OFF)
= 2.7Ω
L
∼
100nH
Min.
-
-
-
-
-
-
-
-
-
Typ.
1500
200
160
400
220
120
160
450
60
Max.
-
-
-
-
-
-
-
-
-
Units
ns
ns
mJ
ns
ns
mJ
µC
A
mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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