This product complies with the RoHS Directive (EU 2002/95/EC).
DMG56406
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For digital circuits
DMG26406 in SMini6 type package
Features
High forward current transfer ratio h
FE
with excellent linearity
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SMini6-F3-B
Name
Pin
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
Basic Part Number
DRC2143T + DRA2143T (Individual)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Marking Symbol: L9
Internal Connection
(C1)
6
(B2)
5
R
1
Tr1
Tr2
R
1
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Tr1
Collector-emitter voltage (Base open)
Collector current
Collector-base voltage (Emitter open)
Tr2
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Overall Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
50
50
100
–50
–50
–100
150
150
–55 to +150
Unit
V
V
mA
V
V
mA
mW
°C
°C
Resistance
value
(E2)
4
1
(E1)
2
(B1)
3
(C2)
Tr1
Tr2
R
1
R
1
4.7
4.7
kΩ
kΩ
Electrical Characteristics
T
a
= 25°C±3°C
Tr1
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
Conditions
I
C
= 10 µA, I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
CE
= 50 V, I
B
= 0
V
EB
= 6 V, I
C
= 0
V
CE
= 10 V, I
C
= 5 mA
I
C
= 10 mA, I
B
= 0.5 mA
V
CE
= 0.2 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 100 µA
–30%
4.7
1.0
0.4
+30%
160
Min
50
50
0.1
0.5
0.01
460
0.25
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2010
ZJJ00775AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DMG56406
Electrical Characteristics (Continued)
T
a
= 25°C±3°C
Tr2
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Input resistance
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
I(on)
V
I(off)
R
1
Conditions
I
C
= –10 µA, I
E
= 0
I
C
= –2 mA, I
B
= 0
V
CB
= –50 V, I
E
= 0
V
CE
= –50 V, I
B
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –10 V, I
C
= –5 mA
I
C
= –10 mA, I
B
= – 0.5 mA
V
CE
= – 0.2 V, I
C
= –5 mA
V
CE
= –5 V, I
C
= –100 µA
–30%
4.7
–1.0
– 0.4
+30%
160
Min
–50
–50
– 0.1
– 0.5
– 0.01
460
– 0.25
Typ
Max
Unit
V
V
µA
µA
mA
V
V
V
kΩ
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
DMG56406_PT-Ta
P
T
T
a
200
Total power dissipation P
T
(mW)
150
100
50
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
Characteristics charts of Tr1
DMG56406(Tr1)_IC-VCE
I
C
V
CE
120
T
a
=
25°C
500
DMG56406(Tr1)_hFE-IC
DMG56406(Tr1)_VCEsat-IC
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
V
CE
=
10 V
10
V
CE(sat)
I
C
I
C
/ I
B
= 20
Forward current transfer ratio h
FE
100
Collector current I
C
(mA)
400
T
a
=
85°C
80
60
40
20
0
I
B
=
350
µA
300
µA
250
µA
200
µA
150
µA
100
µA
50
µA
1
300
25°C
−30°C
200
0.1
T
a
=
85°C
−30°C
25°C
1
10
100
100
0
2
4
6
8
10
12
0
0.1
1
10
100
0.01
0.1
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
2
ZJJ00775AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
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other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
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equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
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provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
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