Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N6322
DESCRIPTION
·With
TO-3 package
·High
current and high power capability
·Low
collector saturation voltage
APPLICATIONS
·For
use in high current ,high
power applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
200
5
30
10
200
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.5
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
2N6322
MAX
UNIT
V
(BR)CEO
Collector-emitter breakdwon voltage
I
C
=30mA ;I
B
=0
200
V
V
(BR)CBO
V
(BR)EBO
Collector-base breakdwon voltage
I
C
=2m A ;I
E
=0
I
E
=2m A ;I
C
=0
300
V
Emitter-base breakdwon voltage
5
V
V
CEsat-1
Collector-emitter saturation voltage
I
C
=20A ;I
B
=2A
1.5
V
V
CEsat-2
Collector-emitter saturation voltage
I
C
=30A; I
B
=6A
3.0
V
V
BE
Base-emitter on voltage
I
C
=30A ; V
CE
=5V
2.5
V
I
CEO
Collector cut-off current
V
CE
=100V; I
B
=0
2.0
mA
μA
μA
I
CES
I
EBO
Collector cut-off current
V
CE
=300V; V
BE
=0
V
EB
=5V; I
C
=0
20
Emitter cut-off current
20
h
FE-1
DC current gain
I
C
=5A ; V
CE
=5V
40
150
h
FE-2
DC current gain
I
C
=20A ; V
CE
=5V
12
h
FE-3
DC current gain
I
C
=30A ; V
CE
=5V
6
f
T
Transition frequency
I
C
=1A ; V
CE
=10V
10
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N6322
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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