Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| package instruction | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain-source on-resistance | 10 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-XUUC-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | SQUARE |
| Package form | UNCASED CHIP |
| Polarity/channel type | P-CHANNEL |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| VPDS1CHP-2 | VPDS1CHP | VPDS1CHP-1 | |
|---|---|---|---|
| Description | Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| package instruction | UNCASED CHIP, S-XUUC-N2 | UNCASED CHIP, S-XUUC-N2 | UNCASED CHIP, S-XUUC-N2 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 |
| Configuration | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V |
| Maximum drain-source on-resistance | 10 Ω | 10 Ω | 10 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | S-XUUC-N2 | S-XUUC-N2 | S-XUUC-N2 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| Package shape | SQUARE | SQUARE | SQUARE |
| Package form | UNCASED CHIP | UNCASED CHIP | UNCASED CHIP |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES |
| Terminal form | NO LEAD | NO LEAD | NO LEAD |
| Terminal location | UPPER | UPPER | UPPER |
| transistor applications | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 |