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BSS84-TAPE-13

Description
TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SMD, 3 PIN, FET General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size132KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BSS84-TAPE-13 Overview

TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SMD, 3 PIN, FET General Purpose Small Signal

BSS84-TAPE-13 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage50 V
Maximum drain current (ID)0.13 A
Maximum drain-source on-resistance10 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)12 pF
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

BSS84-TAPE-13 Related Products

BSS84-TAPE-13 BSS84-TAPE-7
Description TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SMD, 3 PIN, FET General Purpose Small Signal TRANSISTOR 130 mA, 50 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 50 V 50 V
Maximum drain current (ID) 0.13 A 0.13 A
Maximum drain-source on-resistance 10 Ω 10 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 12 pF 12 pF
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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