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2SD1435

Description
RF POWER TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size86KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet Parametric Compare View All

2SD1435 Overview

RF POWER TRANSISTOR

2SD1435 Parametric

Parameter NameAttribute value
stateACTIVE
Transistor typeRF POWER
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4880
DESCRIPTION
·With
TO-3PML package
·High
breakdown voltage
·High
speed switching
APPLICATIONS
·For
color TV display horizontal deflection
output applications
PINNING
PIN
1
2
3
Base
Collector
Fig.1 simplified outline (TO-3PML) and symbol
Emitter
DESCRIPTION
·
Absolute maximum ratings(T
a
=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open emitter
Open base
Open collector
CONDITIONS
VALUE
1700
900
5
12
100
150
-55~150
UNIT
V
V
V
A
W

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2SD1435 2SC4880
Description RF POWER TRANSISTOR RF POWER TRANSISTOR
state ACTIVE ACTIVE
Transistor type RF POWER RF POWER
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