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2SD1711

Description
Silicon NPN Power Transistors
File Size90KB,3 Pages
ManufacturerISC
Websitehttp://www.iscsemi.cn/
Download Datasheet View All

2SD1711 Overview

Silicon NPN Power Transistors

Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1711
DESCRIPTION
·With
TO-3PML package
·High
voltage;high speed
·High
reliability
.
·Built-in
damper diode
APPLICATIONS
·Ultrahigh-definition
CRT display
·Horizontal
deflection output applications
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
5
5
100
150
-55~150
UNIT
V
V
V
A
W
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