INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
DESCRIPTION
·Collector
Current -I
C
=
10A
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 45V(Min)- BD245; 60V(Min)- BD245A
80V(Min)- BD245B; 100V(Min)- BD245C
·Complement
to Type BD246/A/B/C
APPLICATIONS
·Designed
for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BD245
Collector-Emitter
Voltage (R
BE
= 100Ω)
BD245A
BD245B
BD245C
BD245
Collector-Emitter
Voltage
BD245A
BD245B
BD245C
V
EBO
I
C
I
CM
I
B
B
BD245/A/B/C
VALUE
55
70
UNIT
V
CER
V
90
115
45
60
V
80
100
5
10
15
3
3
W
80
150
-65~150
℃
℃
V
A
A
A
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
a
=25℃
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.56
UNIT
℃/W
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD245
BD245A
I
C
= 30mA ;I
B
=0
B
BD245/A/B/C
CONDITIONS
MIN
45
60
TYP.
MAX
UNIT
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
V
80
100
BD245B
BD245C
V
CE(sat)-1
V
CE(sat)-2
V
BE(
on
)-1
V
BE(
on
)-2
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Base-Emitter On Voltage
BD245
BD245A
BD245B
BD245C
BD245/A
BD245B/C
I
C
= 3A; I
B
= 0.3A
B
1.0
4.0
1.6
3.0
V
V
V
V
I
C
= 10A; I
B
= 2.5A
I
C
= 3A ; V
CE
= 4V
I
C
= 10A ; V
CE
= 4V
V
CE
= 55V; V
BE
= 0
V
CE
= 70V; V
BE
= 0
I
CES
Collector
Cutoff Current
0.4
V
CE
= 90V; V
BE
= 0
V
CE
= 115V; V
BE
= 0
V
CE
= 30V;I
B
= 0
0.7
V
CE
= 60V;I
B
= 0
V
EB
= 5V; I
C
=0
I
C
= 1A ; V
CE
= 4V
I
C
= 3A ; V
CE
= 4V
I
C
= 10A ; V
CE
= 4V
I
C
= 0.5A ;V
CE
= 10V,f
test
= 1.0MHz
40
20
4
3.0
1.0
mA
I
CEO
Collector
Cutoff Current
mA
I
EBO
h
FE-1
h
FE-2
h
FE-3
f
T
Emitter Cutoff Current
DC Current Gain
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
mA
MHz
Switching times
t
on
t
off
Turn-on Time
Turn-off Time
0.2
0.8
μs
μs
I
C
= 1A; I
B1
= -I
B2
= 0.1A;
R
L
=20Ω; V
BE(OFF)
= -3.7V
isc Website：www.iscsemi.cn
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