BD652 datasheet, PDF - EEWORLD Datasheet

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BD652: Description8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB; Categorysemiconductor Discrete semiconductor; File Size81KB，2 Pages; ManufacturerISC; Websitehttp://www.iscsemi.cn/

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8 A, 120 V, PNP, Si, POWER TRANSISTOR, TO-220AB

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INCHANGE Semiconductor

isc

Product Specification

isc

Silicon PNP Darlington Power Transistor

BD652

DESCRIPTION

·Collector-Emitter

Breakdown Voltage-

: V

(BR)CEO

= -120V(Min)

·High

DC Current Gain

: h

= 750(Min) @I

= -3A

·Low

Saturation Voltage

·Complement

to Type BD651

APPLICATIONS

·Designed

for use as complementary AF push-pull output

stage applications

ABSOLUTE MAXIMUM RATINGS(T

=25

℃)

SYMBOL

CBO

CEO

EBO

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Collector Power Dissipation

@ T

=25℃

Collector Power Dissipation

@ T

=25℃

Junction Temperature

Storage Temperature Range

VALUE

-140

-120

-5

-8

-12

-0.3

UNIT

62.5

150

-65~150

℃

stg

THERMAL CHARACTERISTICS

SYMBOL

th j-c

th j-a

PARAMETER

Thermal Resistance,Junction to Case

Thermal Resistance,Junction to Ambient

MAX

62.5

UNIT

℃/W

isc Website：www.iscsemi.cn

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