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NAND04GW4B2BN6T

Description
256MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48
Categorystorage    storage   
File Size887KB,57 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Download Datasheet Parametric View All

NAND04GW4B2BN6T Overview

256MX16 FLASH 3V PROM, 35ns, PDSO48, 12 X 20 MM, PLASTIC, TSOP-48

NAND04GW4B2BN6T Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTSOP
package instruction12 X 20 MM, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time35 ns
JESD-30 codeR-PDSO-G48
JESD-609 codee0
length18.4 mm
memory density4294967296 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count268435456 words
character code256000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize256MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP1
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNAND TYPE
width12 mm
Base Number Matches1
NAND01G-B, NAND02G-B,
NAND04G-B, NAND08G-B
1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit
2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
PRELIMINARY DATA
FEATURES SUMMARY
HIGH DENSITY NAND FLASH MEMORIES
– Up to 8 Gbit memory array
– Up to 64Mbit spare area
– Cost effective solutions for mass storage
applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: V
DD
= 1.7 to 1.95V
– 3.0V device: V
DD
= 2.7 to 3.6V
PAGE SIZE
– x8 device: (2048 + 64 spare) Bytes
– x16 device: (1024 + 32 spare) Words
BLOCK SIZE
– x8 device: (128K + 4K spare) Bytes
– x16 device: (64K + 2K spare) Words
PAGE READ / PROGRAM
– Random access: 25µs (max)
– Sequential access: 50ns (min)
– Page program time: 300µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM AND CACHE READ
MODES
– Internal Cache Register to improve the
program and read throughputs
FAST BLOCK ERASE
– Block erase time: 2ms (typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’
– for simple interface with microcontroller
SERIAL NUMBER OPTION
Figure 1. Packages
TSOP48 12 x 20mm
FBGA
VFBGA63 9.5 x 12 x 1mm
TFBGA63 9.5 x 12 x 1.2mm
DATA PROTECTION
– Hardware and Software Block Locking
– Hardware Program/Erase locked during
Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant
with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and
hardware models
– Bad Blocks Management and Wear
Leveling algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
October 2005
1/57
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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