2N6039 datasheet, PDF - EEWORLD Datasheet

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2N6039: Description4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126; Categorysemiconductor Discrete semiconductor; File Size103KB，3 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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2N6039 Overview

4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126

2N6039 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	80 V
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	FLANGE MOUNT
Terminal form	THROUGH-HOLE
terminal coating	TIN LEAD
Terminal location	SINGLE
Packaging Materials	PLASTIC/EPOXY
structure	DARLINGTON
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	1.5 W
Transistor type	GENERAL PURPOSE POWER
Minimum DC amplification factor	100
Rated crossover frequency	25 MHz

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

DESCRIPTION

·With TO-126 package

·Complement to type 2N6034/6035/6036

·DARLINGTON

·High DC current gain

APPLICATIONS

·Designed for general-purpose amplifier

and low-speed switching applications

PINNING(see Fig.2)

1

2

3

DESCRIPTION

Emitter

Collector

Base

2N6037 2N6038 2N6039

Absolute maximum ratings(Ta=

)

SYMBOL

PARAMETER

2N6037

V

CBO

Collector-base voltage

2N6038

2N6039

2N6037

V

CEO

Collector-emitter voltage

2N6038

2N6039

V

EBO

I

C

I

CM

I

B

P

D

T

j

T

stg

Emitter-base voltage

Collector current

Collector current-peak

Base current

Total Power Dissipation

Junction temperature

Storage temperature

T

C

=25

Open collector

Open base

Open emitter

CONDITIONS

VALUE

40

60

80

40

60

80

5

4

8

0.1

40

150

-65~150

V

A

W

V

UNIT

THERMAL CHARACTERISTICS

SYMBOL

R

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

3.12

UNIT

/W

2N6039 Related Products

	2N6039	2N6037	2N6038
Description	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-126
Number of terminals	3	3	3
Transistor polarity	NPN	NPN	NPN
Maximum collector current	4 A	4 A	4 A
Maximum Collector-Emitter Voltage	80 V	40 V	40 V
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	Rectangle	Rectangle
Package Size	FLANGE MOUNT	Flange mounting	Flange mounting
Terminal form	THROUGH-HOLE	THROUGH-hole	THROUGH-hole
Terminal location	SINGLE	single	single
Packaging Materials	PLASTIC/EPOXY	Plastic/Epoxy	Plastic/Epoxy
structure	DARLINGTON	darlington	darlington
Number of components	1	1	1
Transistor component materials	SILICON	silicon	silicon
Transistor type	GENERAL PURPOSE POWER	universal power supply	universal power supply
Minimum DC amplification factor	100	750	750
Rated crossover frequency	25 MHz	25 MHz	25 MHz
Processing package description	-	TO-126, 3 PIN	TO-126, 3 PIN

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