TAK CHEONG
®
SEMICONDUCTOR
500 mW DO-34 Hermetically
Sealed Glass Zener Voltage Regulators
AXIAL LEAD
DO34
Absolute Maximum Ratings
Parameter
Power Dissipation
Storage Temperature Range
Operating Junction Temperature
T
A
= 25°C unless otherwise noted
Value
500
-65 to +175
+175
230
Units
DEVICE MARKING DIAGRAM
°C
°C
°C
L
xxx
T (tolerance)
Band color
Lead Temperature (1/16” from case for 10 seconds)
These ratings are limiting values above which the serviceability of the diode may be impaired.
=Tak Cheong Logo
=Device Code TCMTZJxxx
=A, B, C or D
=Black
Specification Features:
Zener Voltage Range 2.0 to 39 Volts
DO-34 Package (JEDEC DO-204)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All External Surfaces Are Corrosion Resistant And Lads Are Readily Solderable
RoHS Compliant
Solder Hot Dip Tin (Sn) Terminal Finish
Cathode Indicated By Polarity Band
ELECTRICAL SYMBOL
Cathode
Anode
Electrical Characteristics
T
A
= 25°C unless otherwise noted
VZ@IZT
T
Device Type
Tolerance
Min
Nom
Max
TCMTZJ2V0
TCMTZJ2V2
TCMTZJ2V4
TCMTZJ2V7
TCMTZJ3V0
TCMTZJ3V3
TCMTZJ3V6
TCMTZJ3V9
TCMTZJ4V3
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
A
B
C
5.5%
4.3%
4.0%
4.1%
3.9%
4.0%
4.0%
3.9%
3.7%
3.4%
3.4%
3.1%
3.6%
3.3%
3.5%
3.3%
3.0%
3.0%
3.0%
1.880
2.020
2.120
2.220
2.330
2.430
2.540
2.690
2.850
3.010
3.160
3.320
3.455
3.600
3.740
3.890
4.040
4.170
4.300
1.990
2.110
2.210
2.315
2.425
2.530
2.645
2.800
2.960
3.115
3.270
3.425
3.575
3.723
3.875
4.025
4.165
4.300
4.435
2.100
2.200
2.300
2.410
2.520
2.630
2.750
2.910
3.070
3.220
3.380
3.530
3.695
3.845
4.010
4.160
4.290
4.430
4.570
Izt
(mA)
5
5
5
5
5
5
5
5
5
L xxx T
mW
Zzt@Izt
(Ohms)
Max
100
100
100
110
120
120
100
100
100
Zzk@Izk
(Ohms)
Max
1000
1000
1000
1000
1000
1000
1000
1000
1000
Izk
(mA)
0.5
0.5
0.5
0.5
0.5
0.5
1
1
1
I
R
@V
R
(uA)
Max
120
100
120
100
50
20
10
5
5
V
R
(V)
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Number: DB-054
July 2008 / C
Page 1
TCMTZJ2V0 through TCMTZJ39V
TAK CHEONG
®
SEMICONDUCTOR
Zzt@Izt
(Ohms)
Max
80
Zzk@Izk
(Ohms)
Max
900
Izk
(mA)
1
I
R
@V
R
(uA)
Max
5
V
R
(V)
1.0
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Izt
V
Z
@Izt
T
Device Type
(mA)
Tolerance
Min
Nom
Max
TCMTZJ4V7
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
A
B
C
D
2.6%
2.8%
2.7%
2.6%
2.6%
2.7%
2.4%
2.5%
2.6%
2.7%
2.6%
2.5%
2.6%
2.6%
2.6%
2.7%
2.6%
2.5%
2.6%
2.6%
2.5%
2.6%
2.5%
2.6%
2.6%
2.6%
2.5%
2.5%
2.6%
2.6%
2.5%
2.5%
2.6%
2.6%
2.6%
2.6%
2.6%
2.5%
2.6%
2.5%
2.6%
2.6%
2.5%
2.5%
2.5%
2.6%
2.5%
2.5%
2.5%
2.5%
4.44
4.55
4.68
4.81
4.94
5.09
5.28
5.45
5.61
5.78
5.96
6.12
6.29
6.49
6.66
6.85
7.07
7.29
7.53
7.78
8.03
8.29
8.57
8.83
9.12
9.41
9.70
9.94
10.18
10.50
10.82
11.13
11.44
11.74
12.11
12.55
12.99
13.44
13.89
14.35
14.80
15.25
15.69
16.22
16.82
17.42
18.02
18.63
19.23
19.72
4.56
4.68
4.81
4.94
5.07
5.23
5.41
5.59
5.76
5.94
6.12
6.28
6.46
6.66
6.84
7.04
7.26
7.48
7.73
7.99
8.24
8.51
8.79
9.07
9.36
9.66
9.95
10.19
10.45
10.78
11.10
11.42
11.74
12.05
12.43
12.88
13.33
13.79
14.26
14.72
15.19
15.65
16.10
16.64
17.26
17.88
18.49
19.11
19.73
20.22
4.68
4.80
4.93
5.07
5.20
5.37
5.55
5.73
5.91
6.09
6.27
6.44
6.63
6.83
7.01
7.22
7.45
7.67
7.92
8.19
8.45
8.73
9.01
9.30
9.59
9.90
10.20
10.44
10.71
11.05
11.38
11.71
12.03
12.35
12.75
13.21
13.66
14.13
14.62
15.09
15.57
16.04
16.51
17.06
17.70
18.33
18.96
19.59
20.22
20.72
5
TCMTZJ5V1
5
80
800
1
5
1.5
TCMTZJ5V6
5
60
500
1
5
2.5
TCMTZJ6V2
5
60
300
1
5
3.0
TCMTZJ6V8
5
20
150
0.5
2
3.5
TCMTZJ7V5
5
20
120
0.5
0.5
4.0
TCMTZJ8V2
5
20
120
0.5
0.5
5.0
TCMTZJ9V1
5
25
120
0.5
0.5
6.0
TCMTZJ10V
5
30
120
0.5
0.2
7.0
TCMTZJ11V
5
30
120
0.5
0.2
8.0
TCMTZJ12V
5
30
110
0.5
0.2
9.0
TCMTZJ13V
5
35
110
0.5
0.2
10
TCMTZJ15V
5
40
110
0.5
0.2
11
TCMTZJ16V
5
40
150
0.5
0.2
12
TCMTZJ18V
5
45
150
0.5
0.2
13
TCMTZJ20V
5
55
200
0.5
0.2
15
Number: DB-054
July 2008 / C
Page 2
TAK CHEONG
®
SEMICONDUCTOR
Izt
(mA)
Zzt@Izt
(Ohms)
Max
30
Zzk@Izk
(Ohms)
Max
200
Izk
(mA)
I
R
@V
R
(uA)
Max
0.2
V
R
(V)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
V
Z
@Izt
T
Device Type
Tolerance
Min
Nom
Max
A
2.2% 20.15
20.68 21.20
B
2.5% 20.64
21.18 21.71
TCMTZJ22V
5
C
2.5% 21.08
21.63 22.17
D
2.5% 21.52
22.08 22.63
A
2.5% 22.05
22.62 23.18
B
2.5% 22.61
23.19 23.77
TCMTZJ24V
5
C
2.5% 23.12
23.72 24.31
D
2.5% 23.63
24.24 24.85
A
2.5% 24.26
24.89 25.52
B
2.5% 24.97
25.62 26.26
TCMTZJ27V
5
C
2.5% 25.63
26.29 26.95
D
2.5% 26.29
26.97 27.64
A
2.5% 26.99
27.69 28.39
B
2.5% 27.70
28.42 29.13
TCMTZJ30V
5
C
2.5% 28.36
29.09 29.82
D
2.5% 29.02
29.77 30.51
A
2.5% 29.68
30.45 31.22
B
2.5% 30.32
31.10 31.88
TCMTZJ33V
5
C
2.5% 30.90
31.70 32.50
D
2.5% 31.49
32.30 33.11
A
2.5% 32.14
32.97 33.79
B
2.5% 32.79
33.64 34.49
TCMTZJ36V
5
C
2.5% 33.40
34.27 35.13
D
2.5% 34.01
34.89 35.77
A
2.5% 34.68
35.58 36.47
B
2.5% 35.36
36.28 37.19
TCMTZJ39V
5
C
2.5% 36.00
36.93 37.85
D
2.5% 36.63
37.58 38.52
VF (forward voltage) = 1.2 V maximum @ IF = 200mA for all types
Note:
0.5
17
35
200
0.5
0.2
19
45
250
0.5
0.2
21
55
250
0.5
0.2
23
65
250
0.5
0.2
25
75
250
0.5
0.2
27
85
250
0.5
0.2
30
1. The zener voltage subdivision (VZ) is measured 40mS after diode is powered up.
2. The operating resistance (Zzt and Zzk) is measured by superimposing a minute alternation current
in the regulated current (Iz).
3. When ordering, please specify tolerance A, B, C or D.
Number: DB-054
July 2008 / C
Page 3
TAK CHEONG
Typical Characteristics
600
®
SEMICONDUCTOR
1000
PD-Power Passipation [mW]
Total Capacitance [pF]
500
400
300
200
100
0
0
40
VR = 0V
f = 1MHz
Ta = 25
℃
VR = 5V
100
VR = 2V
VR = 20V
10
1
Temperature [
℃
]
80
120
160
200
0
5
10
15
20
25
30
35
40
VZ - Reverse Voltage [V]
Figure 1. Power Dissipation vs Ambient Temperature
Valid provided leads at a distance of 0.8mm from case are kept at
ambient temperature
Figure 2. Total Capacitance
Differential Zener Impedance [Ω]
10000
Iz=1mA
Iz=2mA
Iz=5mA
1000
Ta = 25
℃
Forward Current [mA]
100
Ta = 25
℃
100
Iz=10mA
10
1
1
0.01
0
5
10
15
20
25
30
VZ - Reverse Voltage [V]
35
40
0.1
0
0.2
0.4
0.6
0.8
VF - Forw ard Voltage [m V]
1
1.2
Figure 3. Differential Impedance vs. Zener Voltage
Figure 4. Forward Current vs. Forward Voltage
1000
PD = 500mW
Ta = 25
℃
Reverse Current [mA]
10
0.1
0.001
0
5
10
15
20
25
30
VZ - Reverse Voltage [V]
35
40
Figure 5. Reverse Current vs. Reverse Voltage
Number: DB-054
July 2008 / C
Page 4
TAK CHEONG
Package Outline
Package
®
SEMICONDUCTOR
Case Outline
DO-34
DO-34
Dimension
Min
A
B
C
D
0.46
2.16
25.40
1.27
Millimeters
Max
0.55
3.04
38.10
1.90
Min
0.018
0.085
1.000
0.050
Inches
Max
.0022
0.120
1.500
0.075
Note:
1.0 All dimensions are within JEDEC standard.
2.0 DO-34 polarity denoted by cathode band.
Number: DB-054
July 2008 / C
Page 5
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