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BD242C

Description
3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220
Categorysemiconductor    Discrete semiconductor   
File Size88KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
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BD242C Overview

3 A, 100 V, PNP, Si, POWER TRANSISTOR, TO-220

BD242C Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current3 A
Maximum Collector-Emitter Voltage100 V
Processing package descriptionTO-220, 3 PIN
stateCONSULT MFR
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
terminal coatingTIN LEAD
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor10
Rated crossover frequency3 MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
BD242/A/B/C
DESCRIPTION
·With TO-220C package
·Complement to type BD241/A/B/C
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
BD242
V
CBO
Collector-base voltage
BD242A
BD242B
BD242C
BD242
V
CEO
Collector-emitter voltage
BD242A
BD242B
BD242C
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-55
-70
-90
-115
-45
-60
-80
-100
-5
-3
-5
-1
40
150
-65~150
V
A
A
A
W
V
V
UNIT

BD242C Related Products

BD242C BD242 BD242A BD242B
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Index Files: 185  1998  1095  2311  1077  4  41  23  47  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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