BD681 datasheet, PDF - EEWORLD Datasheet

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BD681: Description4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA; Categorysemiconductor Discrete semiconductor; File Size100KB，3 Pages; ManufacturerSAVANTIC; Websitehttp://www.svntc.com/

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BD681 Overview

4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA

BD681 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	4 A
Maximum Collector-Emitter Voltage	100 V
Processing package description	PLASTIC, CASE 77-09, 3 PIN
state	DISCONTINUED
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	THROUGH-hole
terminal coating	tin lead
Terminal location	single
Packaging Materials	Plastic/Epoxy
structure	Darlington WITH BUILT-IN diode AND resistor
Number of components	1
transistor applications	amplifier
Transistor component materials	silicon
Transistor type	universal power supply
Minimum DC amplification factor	750

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SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

BD675A/677A/679A/681

DESCRIPTION

·With TO-126 package

·Complement to type BD676A/678A/680A/682

·DARLINGTON

APPLICATIONS

·For medium power linear and

switching applications

PINNING

1

2

3

Emitter

Collector;connected to

mounting base

Base

DESCRIPTION

Absolute maximum ratings (Ta=25

)

SYMBOL

PARAMETER

BD675A

V

CBO

Collector-base voltage

BD677A

BD679A

BD681

BD675A

V

CEO

Collector-emitter voltage

BD677A

BD679A

BD681

V

EBO

I

C

I

CM

I

B

P

C

T

j

T

stg

Emitter -base voltage

Collector current

Collector current-Peak

Base current

Collector power dissipation

Junction temperature

Storage temperature

T

C

=25

Open collector

Open base

Open emitter

CONDITIONS

VALUE

45

60

80

100

45

60

80

100

5

4

6

0.1

40

150

-65~150

V

A

W

V

UNIT

BD681 Related Products

	BD681	BD675A	BD677A	BD679A
Description	4 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-225AA	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-126	4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-225AA
Number of terminals	3	3	3	3
Transistor polarity	NPN	NPN	NPN	NPN
Maximum collector current	4 A	4 A	4 A	4 A
Maximum Collector-Emitter Voltage	100 V	60 V	60 V	80 V
state	DISCONTINUED	DISCONTINUED	DISCONTINUED	DISCONTINUED
packaging shape	Rectangle	Rectangle	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting	Flange mounting	Flange mounting
Terminal form	THROUGH-hole	THROUGH-hole	THROUGH-hole	THROUGH-hole
terminal coating	tin lead	tin lead	tin lead	tin lead
Terminal location	single	single	single	single
Packaging Materials	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy	Plastic/Epoxy
structure	Darlington WITH BUILT-IN diode AND resistor	darlington	darlington	Darlington WITH BUILT-IN diode AND resistor
Number of components	1	1	1	1
transistor applications	amplifier	switch	switch	amplifier
Transistor component materials	silicon	silicon	silicon	silicon
Transistor type	universal power supply	universal power supply	universal power supply	universal power supply
Minimum DC amplification factor	750	750	750	750

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