SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3PN package
·Complement to type BDW83/83A/83B/83C/83D
·DARLINGTON
·High DC current gain
APPLICATIONS
·For use in power linear and switching
applications.
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
BDW84/84A/84B/84C/84D
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Tc=25 )
SYMBOL
PARAMETER
BDW84
BDW84A
V
CBO
Collector-base voltage
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
V
CEO
Collector-emitter voltage
BDW84B
BDW84C
BDW84D
V
EBO
I
C
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
T
a
=25
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-45
-60
-80
-100
-120
-45
-60
-80
-100
-120
-5
-15
-0.5
150
3.5
150
-65~150
V
A
A
W
V
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BDW84
BDW84A
V
(BR)CEO
Collector-emitter
breakdown voltage
BDW84B
BDW84C
BDW84D
V
CEsat-1
V
CEsat-2
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter on voltage
BDW84
BDW84A
I
CBO
Collector
cut-off current
BDW84B
BDW84C
BDW84D
BDW84
BDW84A
I
CEO
Collector
cut-off current
BDW84B
BDW84C
BDW84D
I
EBO
h
FE-1
h
FE-2
V
EC
t
on
t
off
Emitter cut-off current
DC current gain
DC current gain
Diode forward voltage
Turn-on time
Turn-off time
I
C
=-6A ,I
B
=-12mA
I
C
=-30mA, I
B
=0
SYMBOL
BDW84/84A/84B/84C/84D
CONDITIONS
MIN
-45
-60
-80
-100
-120
TYP.
MAX
UNIT
V
-2.5
-4.0
-2.5
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
-0.5
-5.0
V
V
V
I
C
=-15A ,I
B
=-150mA
I
C
=-6A ; V
CE
=-3V
V
CB
=-45V, I
E
=0
T
C
=150
V
CB
=-60V, I
E
=0
T
C
=150
V
CB
=-80V, I
E
=0
T
C
=150
V
CB
=-100V, I
E
=0
T
C
=150
V
CB
=-120V, I
E
=0
T
C
=150
V
CE
=-30V, I
B
=0
V
CE
=-30V, I
B
=0
V
CE
=-40V, I
B
=0
V
CE
=-50V, I
B
=0
V
CE
=-60V, I
B
=0
V
EB
=-5V; I
C
=0
I
C
=-6A ; V
CE
=-3V
I
C
=-15A ; V
CE
=-3V
I
E
=-15A
I
C
=-10 A, I
B1
=-I
B2
=-40 mA
R
L
=3B; V
BE(off)
=4.2V
Duty CycleC2%
0.9
7.0
750
100
mA
-1
mA
-2
20000
mA
-3.5
V
As
As
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
2
MAX
0.83
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
BDW84/84A/84B/84C/84D
Fig.2 Outline dimensions(unindicated tolerance:±0.1mm)
3
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