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BDY58

Description
25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size117KB,3 Pages
ManufacturerSAVANTIC
Websitehttp://www.svntc.com/
Download Datasheet Parametric Compare View All

BDY58 Overview

25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3

BDY58 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current25 A
Maximum Collector-Emitter Voltage125 V
stateACTIVE
packaging shapeROUND
Package SizeFLANGE MOUNT
Terminal formPIN/PEG
terminal coatingNOT SPECIFIED
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Shell connectionCOLLECTOR
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor20
Rated crossover frequency7 MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDY57 BDY58
DESCRIPTION
·With TO-3 package
·High current capability
·Fast switching speed
APPLICATIONS
·For use in low frequency large
signal power amplifications
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
PARAMETER
BDY57
Collector-base voltage
BDY58
BDY57
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
Collector-emitter voltage
BDY58
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
125
10
25
6
175
200
-65~200
V
A
A
W
Open emitter
160
80
V
CONDITIONS
VALUE
120
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.0
UNIT
/W

BDY58 Related Products

BDY58 BDY57
Description 25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3 25 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-3
Number of terminals 2 2
Transistor polarity NPN NPN
Maximum collector current 25 A 25 A
Maximum Collector-Emitter Voltage 125 V 125 V
state ACTIVE ACTIVE
packaging shape ROUND ROUND
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form PIN/PEG PIN/PEG
terminal coating NOT SPECIFIED NOT SPECIFIED
Terminal location BOTTOM BOTTOM
Packaging Materials METAL METAL
structure SINGLE SINGLE
Shell connection COLLECTOR COLLECTOR
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 20 20
Rated crossover frequency 7 MHz 7 MHz
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