SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU326 BU326A
DESCRIPTION
·With TO-3 package
·High voltage;high speed
·Low collector saturation voltage.
APPLICATIONS
·Intended for operating in CTV receiver’s
chopper supplies.
PINNING(see fig.2)
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings (Tc=25 )
SYMBOL
PARAMETER
BU326
V
CBO
Collector-base voltage
BU326A
BU326
V
CEO
Collector-emitter voltage
BU326A
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
400
10
6
8
3
75
-65~200
-65~200
V
A
A
A
W
Open emitter
900
375
V
CONDITIONS
VALUE
800
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-C
PARAMETER
Thermal resistance junction to case
MAX
2.33
UNIT
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU326 BU326A
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BU326
I
C
=0.1A; I
B
=0
BU326A
I
C
=2.5 A;I
B
=0.5A
I
C
=4A;I
B
=1.25 A
I
C
=2.5 A;I
B
=0.5A
I
C
=4A;I
B
=1.25 A
V
CE
=800V;V
BE
=0
1
BU326A
I
EBO
h
FE
f
T
Emitter cut-off current
DC current gain
Transition frequency
V
CE
=900V;V
BE
=0
V
EB
=10V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=0.2A ; V
CE
=10V; f=1MHz
4.0
25
MHz
10
mA
mA
400
1.5
3.0
1.4
1.6
V
V
V
V
CONDITIONS
MIN
375
V
TYP.
MAX
UNIT
SYMBOL
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
BU326
I
CES
Collector cut-off current
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=2.5A ;
I
B1
=0.5A;I
B2
=-1A
V
CC
=250V ;
0.5
3.5
0.5
µs
µs
µs
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU326 BU326A
Fig.2 Outline dimensions
3
京公网安备 11010802033920号
EEWORLD
