SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU426 BU426A
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
APPLICATIONS
·Intended for use in switching-mode color
TV supply systems
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25
)
SYMBOL
PARAMETER
BU426
V
CBO
Collector-base voltage
BU426A
BU426
V
CEO
Collector-emitter voltage
BU426A
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25
Open collector
Open base
400
10
6
8
3
113
150
-65~150
V
A
A
A
W
Open emitter
900
375
V
CONDITIONS
VALUE
800
V
UNIT
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU426 BU426A
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BU426
I
C
=100mA; I
B
=0
BU426A
I
C
=2.5A; I
B
=0.5A
I
C
=4A; I
B
=1.25A
I
C
=2.5A; I
B
=0.5A
I
C
=4A; I
B
=1.25A
V
CE
=800V ;V
BE
=0
T
C
=125
V
CE
=900V ;V
BE
=0
T
C
=125
V
EB
=10V; I
C
=0
I
C
=0.6A ; V
CE
=5V
30
400
1.5
3.0
1.4
1.6
1.0
2.0
1.0
2.0
10
60
V
V
V
V
CONDITIONS
MIN
375
V
TYP.
MAX
UNIT
SYMBOL
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
CEsat-1
V
CEsat-2
V
BEsat-1
V
BEsat-2
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
BU426
I
CES
Collector cut-off current
BU426A
mA
I
EBO
h
FE
Emitter cut-off current
DC current gain
mA
Switching times
t
on
t
stg
t
f
Turn-on time
Storage time
Fall time
I
C
=2.5A ; V
CC
=250V
I
B1
=0.5A
0.5
3.5
0.5
µs
µs
µs
I
C
=2.5A ; V
CC
=250V
I
B1
=0.5A; I
B2
=-1A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
VALUE
1.1
UNIT
/W
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU426 BU426A
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
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