SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING
PIN
1
2
3
Base
Collector
Emitter
DESCRIPTION
BUT12F BUT12AF
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Tc=25 )
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
BUT12F
BUT12AF
BUT12F
BUT12AF
CONDITIONS
Open emitter
VALUE
850
1000
400
450
9
8
20
4
6
T
C
=25
23
150
-65~150
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
Thermal resistance from junction to ambient
VALUE
55
UNIT
K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BUT12F
I
C
=0.1A; I
B
=0;L=25mH
BUT12AF
BUT12F
BUT12AF
BUT12F
BUT12AF
BUT12F
BUT12AF
I
C
=6A; I
B
=1.2A
CONDITIONS
BUT12F BUT12AF
SYMBOL
MIN
400
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
450
V
CEsat
Collector-emitter
saturation voltage
1.5
I
C
=5A; I
B
=1A
I
C
=6A; I
B
=1.2A
1.5
I
C
=5A; I
B
=1A
V
CE
=850V ;V
BE
=0
T
j
=125
V
CE
=1000V ;V
BE
=0
T
j
=125
V
EB
=9V; I
C
=0
I
C
=10mA ; V
CE
=5V
I
C
=1A ; V
CE
=5V
10
10
1.0
3.0
1.0
3.0
10
35
35
V
V
BEsat
Base-emitter
saturation voltage
V
I
CES
Collector
cut-off current
mA
I
EBO
h
FE-1
h
FE-2
Emitter cut-off current
DC current gain
DC current gain
mA
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
For BUT12AF
I
C
=5A;I
B1
=-I
B2
=1A;V
CC
=250V
1.0
4.0
0.8
µs
µs
µs
For BUT12F
I
C
=6A;I
B1
=-I
B2
=1.2A;V
CC
=250V
2
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