SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High voltage;high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor control systems
PINNING (See Fig.2)
PIN
1
2
3
Base
Collector
Emitter
l
DESCRIPTION
BUW13F BUW13AF
Absolute maximum ratings(Ta=25 )
SYMBOL
V
CBO
PARAMETER
Collector-base voltage
BUW13F
BUW13AF
BUW13F
BUW13AF
CONDITIONS
Open emitter
VALUE
850
1000
400
450
9
15
30
6
9
T
C
=25
50
150
-65~150
UNIT
V
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
T
T
j
T
stg
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Base current-peak
Total power dissipation
Junction temperature
Storage temperature
Open base
Open collector
V
V
A
A
A
A
W
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
Thermal resistance from junction to ambient
MAX
35
UNIT
K/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
PARAMETER
BUW13F
I
C
=0.1A ; I
B
=0; L=25mH
BUW13AF
BUW13F
BUW13AF
BUW13F
BUW13AF
I
C
=10A; I
B
=2A
CONDITIONS
BUW13F BUW13AF
SYMBOL
MIN
400
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
450
V
CEsat
Collector-emitter
saturation voltage
1.5
I
C
=8A; I
B
=1.6A
I
C
=10A; I
B
=2A
1.6
I
C
=8A; I
B
=1.6A
V
CE
=Rated V
CES
; V
BE
=0
T
j
=125
V
EB
=9V; I
C
=0
I
C
=20mA ; V
CE
=5V
I
C
=1.5A ; V
CE
=5V
10
10
1.0
4.0
10
35
35
V
V
BEsat
Base-emitter
saturation voltage
V
I
CES
I
EBO
h
FE-1
h
FE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
mA
mA
Switching times resistive load
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
For BUW13AF
I
C
=8A ;I
B1
=-I
B2
=-1.6A
1.0
4.0
0.8
µs
µs
µs
For BUW13F
I
C
=10A ;I
B1
=-I
B2
=-2A
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BUW13F BUW13AF
Fig.2 Outline dimensions(unindicated tolerance:±0.30mm)
3
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